JPS5435687A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5435687A
JPS5435687A JP10161077A JP10161077A JPS5435687A JP S5435687 A JPS5435687 A JP S5435687A JP 10161077 A JP10161077 A JP 10161077A JP 10161077 A JP10161077 A JP 10161077A JP S5435687 A JPS5435687 A JP S5435687A
Authority
JP
Japan
Prior art keywords
junction
type emitter
thyristor
negative bevel
emitter junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10161077A
Other languages
Japanese (ja)
Inventor
Katsumi Akabane
Junichi Takita
Hirotoshi Toida
Takeshi Suzuki
Isao Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10161077A priority Critical patent/JPS5435687A/en
Publication of JPS5435687A publication Critical patent/JPS5435687A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the dielectric strength of the circumference of an element from deteriorating by making a n-type emitter junction exposed at a negative bevel flank wider than the interval between a center junction and n-type emitter junction inside a thyristor near the negative bevel flank and by bending the ntype junction further to the cathode side.
JP10161077A 1977-08-26 1977-08-26 Thyristor Pending JPS5435687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10161077A JPS5435687A (en) 1977-08-26 1977-08-26 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10161077A JPS5435687A (en) 1977-08-26 1977-08-26 Thyristor

Publications (1)

Publication Number Publication Date
JPS5435687A true JPS5435687A (en) 1979-03-15

Family

ID=14305157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10161077A Pending JPS5435687A (en) 1977-08-26 1977-08-26 Thyristor

Country Status (1)

Country Link
JP (1) JPS5435687A (en)

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