JPS5437544A - Mos static random access memory - Google Patents

Mos static random access memory

Info

Publication number
JPS5437544A
JPS5437544A JP10403977A JP10403977A JPS5437544A JP S5437544 A JPS5437544 A JP S5437544A JP 10403977 A JP10403977 A JP 10403977A JP 10403977 A JP10403977 A JP 10403977A JP S5437544 A JPS5437544 A JP S5437544A
Authority
JP
Japan
Prior art keywords
random access
access memory
static random
mos static
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10403977A
Other languages
Japanese (ja)
Inventor
Mitsuo Harube
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10403977A priority Critical patent/JPS5437544A/en
Publication of JPS5437544A publication Critical patent/JPS5437544A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To stabilize operations by preventing the contents of a cell from being broken down by making the difference of the mutual conductance of a digitselecting transistor between a read time and write time.
JP10403977A 1977-08-29 1977-08-29 Mos static random access memory Pending JPS5437544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10403977A JPS5437544A (en) 1977-08-29 1977-08-29 Mos static random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10403977A JPS5437544A (en) 1977-08-29 1977-08-29 Mos static random access memory

Publications (1)

Publication Number Publication Date
JPS5437544A true JPS5437544A (en) 1979-03-20

Family

ID=14370072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10403977A Pending JPS5437544A (en) 1977-08-29 1977-08-29 Mos static random access memory

Country Status (1)

Country Link
JP (1) JPS5437544A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125291A (en) * 1982-01-20 1983-07-26 Hitachi Ltd MOS static type RAM
US6724065B2 (en) 1998-10-05 2004-04-20 Sharp Kabushiki Kaisha Static random access memory and semiconductor device using MOS transistors having channel region electrically connected with gate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125291A (en) * 1982-01-20 1983-07-26 Hitachi Ltd MOS static type RAM
US6724065B2 (en) 1998-10-05 2004-04-20 Sharp Kabushiki Kaisha Static random access memory and semiconductor device using MOS transistors having channel region electrically connected with gate
US7019369B2 (en) 1998-10-05 2006-03-28 Sharp Kabushiki Kaisha Static random access memory and semiconductor device using MOS transistors having channel region electrically connected with gate

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