JPS5452431A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5452431A
JPS5452431A JP11925677A JP11925677A JPS5452431A JP S5452431 A JPS5452431 A JP S5452431A JP 11925677 A JP11925677 A JP 11925677A JP 11925677 A JP11925677 A JP 11925677A JP S5452431 A JPS5452431 A JP S5452431A
Authority
JP
Japan
Prior art keywords
common line
circuit
trs
discharge
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11925677A
Other languages
Japanese (ja)
Inventor
Sumio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11925677A priority Critical patent/JPS5452431A/en
Publication of JPS5452431A publication Critical patent/JPS5452431A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To make the high-speed reading possible even when the ON current of a memory-cell array is small, by facilitating the discharge by enabling an inverter to perform the reading in a sense operation time to accelerate the potential variation of a common line. CONSTITUTION:Memory-cell array MA is able to make the maximum n-bit connection and to attain the writing to drains of transistors Tr via digit lines d1, d2...dn. Then, digit lines d1, d2...dn are connected to common read line DL via swtiching Trs Q11, Q12...Q1n, and common line Dl is to sense circuit SA via MOSTr Q22. Here, common line DL is provided with inverter circuit I1 and I2, whose outputs are used for controlling Trs Q28 and Q29; and circuit I1 detects the potential variation of common line DL during the sense operation, and by the detection output, the voltage variation of common line DL is accelerated momentarily to facilitate the discharge. Consequently, the high-speed reading can be done even when the ON current of array MA is small.
JP11925677A 1977-10-04 1977-10-04 Semiconductor memory device Pending JPS5452431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11925677A JPS5452431A (en) 1977-10-04 1977-10-04 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11925677A JPS5452431A (en) 1977-10-04 1977-10-04 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5452431A true JPS5452431A (en) 1979-04-25

Family

ID=14756815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11925677A Pending JPS5452431A (en) 1977-10-04 1977-10-04 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5452431A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794986A (en) * 1980-12-02 1982-06-12 Nec Corp Semiconductor circuit
US4506801A (en) * 1981-12-01 1985-03-26 Idemitsu Kosan Company Limited Construction for holding plastic film
JPS62102499A (en) * 1985-10-28 1987-05-12 Nec Corp Memory circuit
JPS62143295A (en) * 1985-12-17 1987-06-26 Toshiba Corp Semiconductor memory
JPH0562491A (en) * 1991-08-29 1993-03-12 Nec Corp Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794986A (en) * 1980-12-02 1982-06-12 Nec Corp Semiconductor circuit
US4506801A (en) * 1981-12-01 1985-03-26 Idemitsu Kosan Company Limited Construction for holding plastic film
JPS62102499A (en) * 1985-10-28 1987-05-12 Nec Corp Memory circuit
JPS62143295A (en) * 1985-12-17 1987-06-26 Toshiba Corp Semiconductor memory
JPH0562491A (en) * 1991-08-29 1993-03-12 Nec Corp Semiconductor memory

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