JPS5453878A - Forming method of vapor deposition layer - Google Patents

Forming method of vapor deposition layer

Info

Publication number
JPS5453878A
JPS5453878A JP11941477A JP11941477A JPS5453878A JP S5453878 A JPS5453878 A JP S5453878A JP 11941477 A JP11941477 A JP 11941477A JP 11941477 A JP11941477 A JP 11941477A JP S5453878 A JPS5453878 A JP S5453878A
Authority
JP
Japan
Prior art keywords
vapor deposition
deposition layer
vessel
torr
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11941477A
Other languages
Japanese (ja)
Other versions
JPS6159526B2 (en
Inventor
Kazuhisa Taketoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Broadcasting Corp
Original Assignee
Nippon Hoso Kyokai NHK
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Hoso Kyokai NHK, Japan Broadcasting Corp filed Critical Nippon Hoso Kyokai NHK
Priority to JP11941477A priority Critical patent/JPS5453878A/en
Publication of JPS5453878A publication Critical patent/JPS5453878A/en
Publication of JPS6159526B2 publication Critical patent/JPS6159526B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a photoconductive target of IIb-VIb compound having an extremely large carrier mobility, by introducing at least one element to compose a vapor deposition layer into the vacuum airthiht vessel for vapor deposition before initiating the vapor deposition, when forming heterogeneous vapor deposition layer on a substrate by lamination.
CONSTITUTION: When forming a vapor deposition layer consisting heterogenous element compound having the composition of CdxZn1-xSeyTe1-y (0<x<1, 0<y<1) prior to initiating the vapor deposition, the airtight vessel is evacuated into a high vacuum of less than 1×10-7 to 1×10-8 torr. A glass substrate for target having transparent conductive film to be used as a signal electrode is placed into this airtight vessel, of which temperature is kept within 100 to 600°C. In this state, one of hydrogen compounds, such as H2S, H2Se, and H2Te, to form the vapor deposition layer is charged into this vessel at partial gas pressure of 1×10-2 to 1×10-5 torr. After holding 1 second to 30 minutes, the vapor deposition is initiated. Thus, the crystalline nucleus generation rate is extremely lowered
COPYRIGHT: (C)1979,JPO&Japio
JP11941477A 1977-10-06 1977-10-06 Forming method of vapor deposition layer Granted JPS5453878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11941477A JPS5453878A (en) 1977-10-06 1977-10-06 Forming method of vapor deposition layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11941477A JPS5453878A (en) 1977-10-06 1977-10-06 Forming method of vapor deposition layer

Publications (2)

Publication Number Publication Date
JPS5453878A true JPS5453878A (en) 1979-04-27
JPS6159526B2 JPS6159526B2 (en) 1986-12-17

Family

ID=14760867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11941477A Granted JPS5453878A (en) 1977-10-06 1977-10-06 Forming method of vapor deposition layer

Country Status (1)

Country Link
JP (1) JPS5453878A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174026U (en) * 1986-04-24 1987-11-05

Also Published As

Publication number Publication date
JPS6159526B2 (en) 1986-12-17

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