JPS5457974A - Thyristor with amplifying gate - Google Patents

Thyristor with amplifying gate

Info

Publication number
JPS5457974A
JPS5457974A JP12547577A JP12547577A JPS5457974A JP S5457974 A JPS5457974 A JP S5457974A JP 12547577 A JP12547577 A JP 12547577A JP 12547577 A JP12547577 A JP 12547577A JP S5457974 A JPS5457974 A JP S5457974A
Authority
JP
Japan
Prior art keywords
thyristor
area
auxiliary
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12547577A
Other languages
Japanese (ja)
Other versions
JPS6142872B2 (en
Inventor
Do Nakagawa
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12547577A priority Critical patent/JPS5457974A/en
Publication of JPS5457974A publication Critical patent/JPS5457974A/en
Publication of JPS6142872B2 publication Critical patent/JPS6142872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To enhance di/dt and dv/dt capability with reducing the displacement current which flows into an emitter layer over the PN junction of a main thyristor, by providing a Schottky junction between an auxiliary thyristor, which is surrounded by an auxiliary emitter area and the emitter area, and the main thyristor. CONSTITUTION:P-type emitter layer 4, N-type base layer 3 and P-type base layer 2 are formed by lamination, and N-type emitter area 5 is formed at both edges of layer 2 by diffusion to constitute a main thyristor, and PN junction J3 is generated between them. Next, N-type auxiliary emitter area 6 is formed in layer 2, which is surrounded by area 5, at prescribed intervals by diffusion, and gate electrode 7 is fitted between them to constitute an auxiliary thyristor. In this constitution, metallic film 11 is caused to adhere so that this film may contact with area 5 and cathode electrode 9 provided on area 5, thereby forming Schottky junction 12. As a result, the displacement current from the auxiliary thyristor is prevented from flowing over junction J3 even if the voltage is fluctuated, and the main thyristor is prevented from moving to an on-state.
JP12547577A 1977-10-18 1977-10-18 Thyristor with amplifying gate Granted JPS5457974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12547577A JPS5457974A (en) 1977-10-18 1977-10-18 Thyristor with amplifying gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12547577A JPS5457974A (en) 1977-10-18 1977-10-18 Thyristor with amplifying gate

Publications (2)

Publication Number Publication Date
JPS5457974A true JPS5457974A (en) 1979-05-10
JPS6142872B2 JPS6142872B2 (en) 1986-09-24

Family

ID=14910999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12547577A Granted JPS5457974A (en) 1977-10-18 1977-10-18 Thyristor with amplifying gate

Country Status (1)

Country Link
JP (1) JPS5457974A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832663U (en) * 1981-08-27 1983-03-03 東洋電機製造株式会社 Thyristor gate electrode structure
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832663U (en) * 1981-08-27 1983-03-03 東洋電機製造株式会社 Thyristor gate electrode structure
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor

Also Published As

Publication number Publication date
JPS6142872B2 (en) 1986-09-24

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