JPS5458380A - Zener diode - Google Patents

Zener diode

Info

Publication number
JPS5458380A
JPS5458380A JP12450577A JP12450577A JPS5458380A JP S5458380 A JPS5458380 A JP S5458380A JP 12450577 A JP12450577 A JP 12450577A JP 12450577 A JP12450577 A JP 12450577A JP S5458380 A JPS5458380 A JP S5458380A
Authority
JP
Japan
Prior art keywords
diode
substrate
wiring layer
bump electrode
dhs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12450577A
Other languages
Japanese (ja)
Other versions
JPS6125220B2 (en
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12450577A priority Critical patent/JPS5458380A/en
Publication of JPS5458380A publication Critical patent/JPS5458380A/en
Publication of JPS6125220B2 publication Critical patent/JPS6125220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To establish the Zener diode of high reliability as for DHS(double heat sink), by providing the bump electrode via the wiring layer on the diode, through the provision of diode on the substrate at the output side of temperature compensation type diode.
CONSTITUTION: The region 2 being transistors T1 to T3, and the region 3 being resistor R1 to R4 and diodes D1 to D3 are formed on the n type substrate 1. At the location apart from those, the diode D4 is formed by placing the p layer 7. Opening window is made to the oxide film 4 on it, the wiring layer connected to the regions 2 and 3 is provided, Ag bump electrode 8 is made and it is covered with PSG 6. with this constitution, in evaporating the wiring layer 5, the evaporated metal is slightly diffused in the substrate, increasing the bonding force with the substrate and the bump electrode. The performance can be improved and the DHS Zener element with high reliability can be obtained
COPYRIGHT: (C)1979,JPO&Japio
JP12450577A 1977-10-19 1977-10-19 Zener diode Granted JPS5458380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12450577A JPS5458380A (en) 1977-10-19 1977-10-19 Zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12450577A JPS5458380A (en) 1977-10-19 1977-10-19 Zener diode

Publications (2)

Publication Number Publication Date
JPS5458380A true JPS5458380A (en) 1979-05-11
JPS6125220B2 JPS6125220B2 (en) 1986-06-14

Family

ID=14887141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12450577A Granted JPS5458380A (en) 1977-10-19 1977-10-19 Zener diode

Country Status (1)

Country Link
JP (1) JPS5458380A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208787A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Equivalent zener diode
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US5066991A (en) * 1989-12-26 1991-11-19 Motorola, Inc. Semiconductor diode and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5257780A (en) * 1975-11-06 1977-05-12 Mitsubishi Electric Corp Semiconductor device
JPS5265688A (en) * 1975-11-25 1977-05-31 Siemens Corp Temperature compensating reference standard diode and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5257780A (en) * 1975-11-06 1977-05-12 Mitsubishi Electric Corp Semiconductor device
JPS5265688A (en) * 1975-11-25 1977-05-31 Siemens Corp Temperature compensating reference standard diode and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
JPS59208787A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Equivalent zener diode
US5066991A (en) * 1989-12-26 1991-11-19 Motorola, Inc. Semiconductor diode and method

Also Published As

Publication number Publication date
JPS6125220B2 (en) 1986-06-14

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