JPS5460576A - Manufacture of insulating gate type field effect transistor - Google Patents

Manufacture of insulating gate type field effect transistor

Info

Publication number
JPS5460576A
JPS5460576A JP12685077A JP12685077A JPS5460576A JP S5460576 A JPS5460576 A JP S5460576A JP 12685077 A JP12685077 A JP 12685077A JP 12685077 A JP12685077 A JP 12685077A JP S5460576 A JPS5460576 A JP S5460576A
Authority
JP
Japan
Prior art keywords
poly
manufacture
field effect
effect transistor
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12685077A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12685077A priority Critical patent/JPS5460576A/en
Publication of JPS5460576A publication Critical patent/JPS5460576A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce IGFET in a high yield by applying the self-matching system for formation of the source and drain electrodes.
CONSTITUTION: SiO212 is formed locally to P-type substrate 10, and poly Si14 and PSG16 are laminated with the opening drilled (18) through etching. Then SiO2 thin film 20 is formed within the opening, and at the same time the phosphorus is diffused from PSG to form N+-layer 22 and 24. And the poly Si layer is turned to a low resistance. Furthermore, gate electrode 26 is formed by conductive poly Si or Al and then covered with PSG protective film 28. In this way, the source and the drain are positioned automatically to the gate electrode, and each electrode is also positioned automatically. Thus, the yield can be increased greatly
COPYRIGHT: (C)1979,JPO&Japio
JP12685077A 1977-10-24 1977-10-24 Manufacture of insulating gate type field effect transistor Pending JPS5460576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12685077A JPS5460576A (en) 1977-10-24 1977-10-24 Manufacture of insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12685077A JPS5460576A (en) 1977-10-24 1977-10-24 Manufacture of insulating gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5460576A true JPS5460576A (en) 1979-05-16

Family

ID=14945391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12685077A Pending JPS5460576A (en) 1977-10-24 1977-10-24 Manufacture of insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5460576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148369A (en) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Method of producing mos transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148369A (en) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Method of producing mos transistor

Similar Documents

Publication Publication Date Title
JPS56115525A (en) Manufacture of semiconductor device
GB1451096A (en) Semiconductor devices
JPS56125868A (en) Thin-film semiconductor device
JPS5696850A (en) Semiconductor device and manufacture thereof
JPS5471564A (en) Production of semiconductor device
JPS5458386A (en) Mos semiconductor device
JPS54109785A (en) Semiconductor device
JPS5460576A (en) Manufacture of insulating gate type field effect transistor
JPS5585068A (en) Preparation of semiconductor device
JPS53109487A (en) Manufacture for semiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS57113262A (en) Voltage dividing system for semiconductor integrated circuit
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS5455388A (en) Production of mos type semiconductor device
JPS5750452A (en) Semiconductor device
JPS5489594A (en) Manufacture for integrated circuit
JPS53144686A (en) Production of semiconductor device
JPS52130580A (en) High densityintegrated circuit device
JPS53105385A (en) Manufacture for semiconductor
JPS5432981A (en) Manufacture of longitudinal mos field effect transistor
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5513953A (en) Complementary integrated circuit
JPS52147983A (en) Insulation gate type semiconductor device
JPS57207375A (en) Manufacture of semiconductor device
JPS5459875A (en) Semiconductor device