JPS5473580A - Temperature measuring of mis semiconductor unit - Google Patents

Temperature measuring of mis semiconductor unit

Info

Publication number
JPS5473580A
JPS5473580A JP14000377A JP14000377A JPS5473580A JP S5473580 A JPS5473580 A JP S5473580A JP 14000377 A JP14000377 A JP 14000377A JP 14000377 A JP14000377 A JP 14000377A JP S5473580 A JPS5473580 A JP S5473580A
Authority
JP
Japan
Prior art keywords
measured
measurement
leakage current
fet
substrate temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14000377A
Other languages
Japanese (ja)
Inventor
Kazuo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14000377A priority Critical patent/JPS5473580A/en
Publication of JPS5473580A publication Critical patent/JPS5473580A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To achieve the improvement in measurement accuracy and the simplification of measurement work by measuring the leakage current between the drain of an insulated gate type FET and its substrate and calculating the semiconductor substrate temperature in a sealing body based on the results of this measurement.
CONSTITUTION: The correlations ΔIL/ΔTa between the substrate temperature Ta and substrate leakage current IL of an insulated gate type FET have beforehand been obtained through measurement. Next, a drain voltage V1 and a gate voltage V2 are applied to the FET after sealing and the power PC1 consumed by the FET is measured with an ammeter I and voltmeter DV. The leakage current IL is then measured with the ammeter IL. Next, the gate voltage V2 is changed and the power consumption PC2 of that time is measured. The leakage current IL2 at this power consumption PC2 is measured. Based on this measurement value, heat resistance Qj-a is obtained from the formula (2) and the substrate temperature in the sealing body is obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP14000377A 1977-11-24 1977-11-24 Temperature measuring of mis semiconductor unit Pending JPS5473580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14000377A JPS5473580A (en) 1977-11-24 1977-11-24 Temperature measuring of mis semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14000377A JPS5473580A (en) 1977-11-24 1977-11-24 Temperature measuring of mis semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5473580A true JPS5473580A (en) 1979-06-12

Family

ID=15258663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14000377A Pending JPS5473580A (en) 1977-11-24 1977-11-24 Temperature measuring of mis semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5473580A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835475A (en) * 1981-08-28 1983-03-02 Nippon Telegr & Teleph Corp <Ntt> Measuring method for semiconductor device
US7804372B2 (en) 2006-06-09 2010-09-28 Fujitsu Limited Ring oscillator for temperature sensor, temperature sensor circuit, and semiconductor device having the same
CN102608511A (en) * 2012-03-08 2012-07-25 东南大学 Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835475A (en) * 1981-08-28 1983-03-02 Nippon Telegr & Teleph Corp <Ntt> Measuring method for semiconductor device
US7804372B2 (en) 2006-06-09 2010-09-28 Fujitsu Limited Ring oscillator for temperature sensor, temperature sensor circuit, and semiconductor device having the same
CN102608511A (en) * 2012-03-08 2012-07-25 东南大学 Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube
CN102608511B (en) * 2012-03-08 2014-12-10 东南大学 Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube

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