JPS5474675A - Semiconductor device of resin seal type - Google Patents

Semiconductor device of resin seal type

Info

Publication number
JPS5474675A
JPS5474675A JP14187177A JP14187177A JPS5474675A JP S5474675 A JPS5474675 A JP S5474675A JP 14187177 A JP14187177 A JP 14187177A JP 14187177 A JP14187177 A JP 14187177A JP S5474675 A JPS5474675 A JP S5474675A
Authority
JP
Japan
Prior art keywords
resin
transition temperature
semiconductor device
thermal distortion
seal type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14187177A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14187177A priority Critical patent/JPS5474675A/en
Publication of JPS5474675A publication Critical patent/JPS5474675A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To decrease time aging and to make stable the operating characteristics, by using the resin low in thermal distortion transition temperature for sealing resin.
CONSTITUTION: As the resin for the semiconductor device sealing GaAs LED with resin, the resin less than 100°C in thermal distortion transition temperature is used. For example, if the resin R1 and R2 in which the thermal distortion transition temperature is more than 100°c are used, the optical output of the sealed GaAs LED is deteriorated to 10% of the initial value with the power application for 1000 hours, but with the resin in which transition temperature is less than 100°C used, the optical output is more than 90% of the initial value.
COPYRIGHT: (C)1979,JPO&Japio
JP14187177A 1977-11-26 1977-11-26 Semiconductor device of resin seal type Pending JPS5474675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14187177A JPS5474675A (en) 1977-11-26 1977-11-26 Semiconductor device of resin seal type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14187177A JPS5474675A (en) 1977-11-26 1977-11-26 Semiconductor device of resin seal type

Publications (1)

Publication Number Publication Date
JPS5474675A true JPS5474675A (en) 1979-06-14

Family

ID=15302090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14187177A Pending JPS5474675A (en) 1977-11-26 1977-11-26 Semiconductor device of resin seal type

Country Status (1)

Country Link
JP (1) JPS5474675A (en)

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