JPS5477075A - Solid state current limiter - Google Patents

Solid state current limiter

Info

Publication number
JPS5477075A
JPS5477075A JP10697478A JP10697478A JPS5477075A JP S5477075 A JPS5477075 A JP S5477075A JP 10697478 A JP10697478 A JP 10697478A JP 10697478 A JP10697478 A JP 10697478A JP S5477075 A JPS5477075 A JP S5477075A
Authority
JP
Japan
Prior art keywords
solid state
state current
current limiter
limiter
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10697478A
Other languages
English (en)
Inventor
Bii Superuman Goodon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cutler Hammer World Trade Inc
Original Assignee
Cutler Hammer World Trade Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer World Trade Inc filed Critical Cutler Hammer World Trade Inc
Publication of JPS5477075A publication Critical patent/JPS5477075A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/38Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113Isolations within a component, i.e. internal isolations
    • H10D62/114PN junction isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113Isolations within a component, i.e. internal isolations
    • H10D62/115Dielectric isolations, e.g. air gaps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP10697478A 1977-11-30 1978-08-31 Solid state current limiter Pending JPS5477075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/855,933 US4187513A (en) 1977-11-30 1977-11-30 Solid state current limiter

Publications (1)

Publication Number Publication Date
JPS5477075A true JPS5477075A (en) 1979-06-20

Family

ID=25322467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10697478A Pending JPS5477075A (en) 1977-11-30 1978-08-31 Solid state current limiter

Country Status (6)

Country Link
US (1) US4187513A (ja)
JP (1) JPS5477075A (ja)
DE (1) DE2846698A1 (ja)
FR (1) FR2410879A1 (ja)
GB (1) GB1599500A (ja)
IT (1) IT1109633B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132968U (ja) * 1979-03-09 1980-09-20
JPS6066518A (ja) * 1983-09-21 1985-04-16 Mitsubishi Electric Corp 半導体集積回路

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand
US4982248A (en) * 1989-01-11 1991-01-01 International Business Machines Corporation Gated structure for controlling fluctuations in mesoscopic structures
AU4942993A (en) * 1993-09-08 1995-03-27 Siemens Aktiengesellschaft Current limiting device
CN1111909C (zh) * 1994-12-20 2003-06-18 皇家菲利浦电子有限公司 电路装置及适用于该电路装置的结型场效应晶体管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5057586A (ja) * 1973-09-20 1975-05-20
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
JPS5220314A (en) * 1975-08-07 1977-02-16 Matsushita Electric Ind Co Ltd Reservoir for storing hydrogen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE572049A (ja) * 1957-12-03 1900-01-01
US3516017A (en) * 1967-06-14 1970-06-02 Hitachi Ltd Microwave semiconductor device
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
US3852794A (en) * 1972-05-11 1974-12-03 Trustees Of Leland Stamford Ju High speed bulk semiconductor microwave switch
FR2293068A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Dispositif semi-conducteur a effet gunn
US4134122A (en) * 1974-11-29 1979-01-09 Thomson-Csf Hyperfrequency device with gunn effect

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5057586A (ja) * 1973-09-20 1975-05-20
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
JPS5220314A (en) * 1975-08-07 1977-02-16 Matsushita Electric Ind Co Ltd Reservoir for storing hydrogen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132968U (ja) * 1979-03-09 1980-09-20
JPS6066518A (ja) * 1983-09-21 1985-04-16 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
FR2410879B3 (ja) 1981-10-02
DE2846698A1 (de) 1979-06-07
GB1599500A (en) 1981-10-07
US4187513A (en) 1980-02-05
IT7869734A0 (it) 1978-11-29
FR2410879A1 (fr) 1979-06-29
IT1109633B (it) 1985-12-23

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