JPS5477569A - Production of semiconductor element - Google Patents

Production of semiconductor element

Info

Publication number
JPS5477569A
JPS5477569A JP14526277A JP14526277A JPS5477569A JP S5477569 A JPS5477569 A JP S5477569A JP 14526277 A JP14526277 A JP 14526277A JP 14526277 A JP14526277 A JP 14526277A JP S5477569 A JPS5477569 A JP S5477569A
Authority
JP
Japan
Prior art keywords
film
windows
resist
serration
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14526277A
Other languages
Japanese (ja)
Other versions
JPS6212663B2 (en
Inventor
Tomio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14526277A priority Critical patent/JPS5477569A/en
Publication of JPS5477569A publication Critical patent/JPS5477569A/en
Publication of JPS6212663B2 publication Critical patent/JPS6212663B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads

Landscapes

  • Weting (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To eliminate adverse influence on electrode window formation through serration of film thickness and make fine windows by forming a Si3N4 film only on bonding pad parts and well bonding electrode metals and semiconductor substrate.
CONSTITUTION: After a base layer 1 is provided on a Si substrate 4, SiO2 2, Si3N4 3 are superposed and resist is provided on the parts intended for connection of lead-out electrodes and external electrodes, through the former of which the film 3 is selectively etched. Next, when the resist film 5' is opened (a), the serration based on the thickness of the film 3 is suffciently a way from the pening (a) and the resist is formed flat and therefore light scattering is small at the time of exposure and fine holes are formed. Next, windows are opened in the film 2 through the resist mask and an emitter layer 10 is created. Next, base electrode windows are formed and multilayer electrodes of Ti 12-Pt 13-Au 14 are made by way of platinum silicide 11. According to this method, the bonding strength is equivalent to that by ordinary methods and the finer emitter windows may be formed.
COPYRIGHT: (C)1979,JPO&Japio
JP14526277A 1977-12-02 1977-12-02 Production of semiconductor element Granted JPS5477569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14526277A JPS5477569A (en) 1977-12-02 1977-12-02 Production of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14526277A JPS5477569A (en) 1977-12-02 1977-12-02 Production of semiconductor element

Publications (2)

Publication Number Publication Date
JPS5477569A true JPS5477569A (en) 1979-06-21
JPS6212663B2 JPS6212663B2 (en) 1987-03-19

Family

ID=15381054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14526277A Granted JPS5477569A (en) 1977-12-02 1977-12-02 Production of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5477569A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260249A (en) * 1985-09-09 1987-03-16 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260249A (en) * 1985-09-09 1987-03-16 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6212663B2 (en) 1987-03-19

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