JPS5477581A - Semiconductor circuit device - Google Patents

Semiconductor circuit device

Info

Publication number
JPS5477581A
JPS5477581A JP14529677A JP14529677A JPS5477581A JP S5477581 A JPS5477581 A JP S5477581A JP 14529677 A JP14529677 A JP 14529677A JP 14529677 A JP14529677 A JP 14529677A JP S5477581 A JPS5477581 A JP S5477581A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
charges
thru
under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14529677A
Other languages
Japanese (ja)
Other versions
JPS5921188B2 (en
Inventor
Kazuyasu Fujishima
Michihiro Yamada
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP52145296A priority Critical patent/JPS5921188B2/en
Publication of JPS5477581A publication Critical patent/JPS5477581A/en
Publication of JPS5921188B2 publication Critical patent/JPS5921188B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To divide and store charges at a constant ratio by electrodes of a constant area ratio. CONSTITUTION:Electrodes 3a thru 3d are made on the gate insulation film 2 on a semiconductor substrate 1. Driving pulse voltage phi are applied to the electrodes at timings t1 thru t3. Since charge quantity Q is introduced under the electrode 3a at the time t1 and voltage VDD is applied together with phi1 thru phi4 at t1', channels are produced under all electrodes and all charges are dispersed and stored under all electrodes. At t2, the electrode 3a becomes OV and residual charges under the electrode 3a are transferred to the underside of the electrodes 3b thru 3d. At t3, the voltage phi3 of the electrode 3c becomes OV and therefore the charges thereunder are also transferred to the underside of the electrodes 3b, 3d and in the end Q is divided by the area ratio of the electrodes 3b, 3d. Hence, if the area ratio is set at (N - 1)/1, the charges of Q/N may be stored under the electrode 3d.
JP52145296A 1977-12-02 1977-12-02 semiconductor circuit device Expired JPS5921188B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52145296A JPS5921188B2 (en) 1977-12-02 1977-12-02 semiconductor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52145296A JPS5921188B2 (en) 1977-12-02 1977-12-02 semiconductor circuit device

Publications (2)

Publication Number Publication Date
JPS5477581A true JPS5477581A (en) 1979-06-21
JPS5921188B2 JPS5921188B2 (en) 1984-05-18

Family

ID=15381855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52145296A Expired JPS5921188B2 (en) 1977-12-02 1977-12-02 semiconductor circuit device

Country Status (1)

Country Link
JP (1) JPS5921188B2 (en)

Also Published As

Publication number Publication date
JPS5921188B2 (en) 1984-05-18

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