JPS547879A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS547879A JPS547879A JP7344277A JP7344277A JPS547879A JP S547879 A JPS547879 A JP S547879A JP 7344277 A JP7344277 A JP 7344277A JP 7344277 A JP7344277 A JP 7344277A JP S547879 A JPS547879 A JP S547879A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- polycrystal
- layer
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To arbitrarily reduce the distance between the N type emitter and the P+ layer, by forming P+ layer before polycrystal Si coating and by selectively oxidizing the polycrystal Si.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7344277A JPS547879A (en) | 1977-06-20 | 1977-06-20 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7344277A JPS547879A (en) | 1977-06-20 | 1977-06-20 | Manufacture for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS547879A true JPS547879A (en) | 1979-01-20 |
Family
ID=13518346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7344277A Pending JPS547879A (en) | 1977-06-20 | 1977-06-20 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS547879A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617034A (en) * | 1979-07-20 | 1981-02-18 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
-
1977
- 1977-06-20 JP JP7344277A patent/JPS547879A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617034A (en) * | 1979-07-20 | 1981-02-18 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5351970A (en) | Manufacture for semiconductor substrate | |
| JPS543479A (en) | Semiconductor device and its manufacture | |
| JPS5395571A (en) | Semiconductor device | |
| JPS53148389A (en) | Manufacture for semiconductor device | |
| JPS53124087A (en) | Manufacture of semiconductor device | |
| JPS547879A (en) | Manufacture for semiconductor device | |
| JPS52128063A (en) | Manufacture of semiconductor device | |
| JPS5228888A (en) | Emission semiconductor device | |
| JPS538072A (en) | Semiconductor device | |
| JPS52131462A (en) | Manufacture of semiconductor device | |
| JPS52141565A (en) | Manufacture of semiconductor unit | |
| JPS5419367A (en) | Production of semiconductor device | |
| JPS5417677A (en) | Manufacture of semiconductor | |
| JPS52179A (en) | Method of fabricating semiconductor | |
| JPS5397771A (en) | Semiconductor device | |
| JPS52119192A (en) | Semiconductor | |
| JPS5424574A (en) | Manufacture for semiconductor device | |
| JPS547867A (en) | Manufacture for semiconductor device | |
| JPS5289467A (en) | Semiconductor device | |
| JPS5231691A (en) | Semiconductor luminous device | |
| JPS5373979A (en) | Transistor device | |
| JPS5373990A (en) | Semiconductor device | |
| JPS5396761A (en) | Production of semiconductor device | |
| JPS5410683A (en) | Production of smiconductor device | |
| JPS526090A (en) | Semiconductor integrated circuit |