JPS5488071A - Vapor-phase growth method of compound semiconductor - Google Patents

Vapor-phase growth method of compound semiconductor

Info

Publication number
JPS5488071A
JPS5488071A JP15678377A JP15678377A JPS5488071A JP S5488071 A JPS5488071 A JP S5488071A JP 15678377 A JP15678377 A JP 15678377A JP 15678377 A JP15678377 A JP 15678377A JP S5488071 A JPS5488071 A JP S5488071A
Authority
JP
Japan
Prior art keywords
source
boat
reaction gas
gaas substrate
supporting jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15678377A
Other languages
Japanese (ja)
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15678377A priority Critical patent/JPS5488071A/en
Publication of JPS5488071A publication Critical patent/JPS5488071A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To make the consumption from a source surface uniform to avoid the change of a growing speed at a repeated used, by arranging a GaAs substrate and a source boat in a model vapour-phase growing unit and making reaction gas into shower to blow it onto the source boat when reaction gas is led into this unit. CONSTITUTION:Source boat supporting jig 20 is arranged in a reaction tube storing a GaAs substrate which will be grown. Boat 21 equipped with partitions is arranged on the bottom face of this supporting jig 20, and source 22 is charged in each section. Then, supply tube 24 for reaction gas 23 is arranged above the source through the side wall of supporting jig 20. Further, one or plural holes 25 are provided on the lower face of supply tube 24 correspondingly to each section of boat 21, and reaction gas 23 is jetted in shower downward from holes. Thus, the total area of the source is not changed and the height of the source is reduced according to the consumption of source 22, so that the growing speed to the GaAs substrate can be made uniform.
JP15678377A 1977-12-26 1977-12-26 Vapor-phase growth method of compound semiconductor Pending JPS5488071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678377A JPS5488071A (en) 1977-12-26 1977-12-26 Vapor-phase growth method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678377A JPS5488071A (en) 1977-12-26 1977-12-26 Vapor-phase growth method of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5488071A true JPS5488071A (en) 1979-07-12

Family

ID=15635205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678377A Pending JPS5488071A (en) 1977-12-26 1977-12-26 Vapor-phase growth method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5488071A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62129070U (en) * 1986-02-10 1987-08-15
CN115198354A (en) * 2022-07-20 2022-10-18 江苏振宁半导体研究院有限公司 Preparation method of ultrathin substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62129070U (en) * 1986-02-10 1987-08-15
CN115198354A (en) * 2022-07-20 2022-10-18 江苏振宁半导体研究院有限公司 Preparation method of ultrathin substrate

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