JPS5488089A - Thyristor capable of breaking without breaking delay time and method of operating same - Google Patents
Thyristor capable of breaking without breaking delay time and method of operating sameInfo
- Publication number
- JPS5488089A JPS5488089A JP12791678A JP12791678A JPS5488089A JP S5488089 A JPS5488089 A JP S5488089A JP 12791678 A JP12791678 A JP 12791678A JP 12791678 A JP12791678 A JP 12791678A JP S5488089 A JPS5488089 A JP S5488089A
- Authority
- JP
- Japan
- Prior art keywords
- breaking
- delay time
- operating same
- thyristor capable
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1583277A CH629338A5 (de) | 1977-12-22 | 1977-12-22 | Ohne sperrverzoegerung abschaltbarer thyristor. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5488089A true JPS5488089A (en) | 1979-07-12 |
Family
ID=4412334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12791678A Pending JPS5488089A (en) | 1977-12-22 | 1978-10-19 | Thyristor capable of breaking without breaking delay time and method of operating same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5488089A (de) |
| CH (1) | CH629338A5 (de) |
| DE (1) | DE2804014A1 (de) |
| GB (1) | GB2011712B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5940576A (ja) * | 1982-08-30 | 1984-03-06 | Junichi Nishizawa | フオトサイリスタ |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2535901A1 (fr) * | 1982-11-10 | 1984-05-11 | Silicium Semiconducteur Ssc | Thyristor asymetrique a forte tenue en tension inverse |
| DE3424222A1 (de) * | 1984-06-30 | 1986-01-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Abschaltbarer thyristor |
| DE4108611A1 (de) * | 1990-12-22 | 1992-06-25 | Bosch Gmbh Robert | Hochspannungsbauelement |
-
1977
- 1977-12-22 CH CH1583277A patent/CH629338A5/de not_active IP Right Cessation
-
1978
- 1978-01-31 DE DE19782804014 patent/DE2804014A1/de not_active Withdrawn
- 1978-10-19 JP JP12791678A patent/JPS5488089A/ja active Pending
- 1978-12-20 GB GB7849372A patent/GB2011712B/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5940576A (ja) * | 1982-08-30 | 1984-03-06 | Junichi Nishizawa | フオトサイリスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2804014A1 (de) | 1979-07-05 |
| GB2011712A (en) | 1979-07-11 |
| CH629338A5 (de) | 1982-04-15 |
| GB2011712B (en) | 1982-06-16 |
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