JPS54885A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS54885A
JPS54885A JP6594377A JP6594377A JPS54885A JP S54885 A JPS54885 A JP S54885A JP 6594377 A JP6594377 A JP 6594377A JP 6594377 A JP6594377 A JP 6594377A JP S54885 A JPS54885 A JP S54885A
Authority
JP
Japan
Prior art keywords
type region
manufacture
field effect
effect transistor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6594377A
Other languages
Japanese (ja)
Inventor
Kiyoshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6594377A priority Critical patent/JPS54885A/en
Publication of JPS54885A publication Critical patent/JPS54885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Abstract

PURPOSE: To increase the dielectric strength as well as the power gain and also to enhance the high frequency properties, by forming the N-type layer on the Ntype semiconductor substrate to provide P-type region there and installing gate insulator film at the center part of the ring-like P-type region after forming P N-type region in the P-type region.
COPYRIGHT: (C)1979,JPO&Japio
JP6594377A 1977-06-03 1977-06-03 Manufacture of field effect transistor Pending JPS54885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6594377A JPS54885A (en) 1977-06-03 1977-06-03 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6594377A JPS54885A (en) 1977-06-03 1977-06-03 Manufacture of field effect transistor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61196860A Division JPS62122175A (en) 1986-08-22 1986-08-22 Semiconductor device
JP62178225A Division JPS6387769A (en) 1987-07-17 1987-07-17 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS54885A true JPS54885A (en) 1979-01-06

Family

ID=13301546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6594377A Pending JPS54885A (en) 1977-06-03 1977-06-03 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS54885A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109376A (en) * 1980-08-18 1982-07-07 Int Rectifier Corp High power mosfet
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
JPS5898967A (en) * 1981-12-09 1983-06-13 Nec Corp semiconductor equipment
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5008725A (en) * 1979-05-14 1991-04-16 International Rectifier Corporation Plural polygon source pattern for MOSFET
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US5008725A (en) * 1979-05-14 1991-04-16 International Rectifier Corporation Plural polygon source pattern for MOSFET
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4593302A (en) * 1980-08-18 1986-06-03 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
JPS57109376A (en) * 1980-08-18 1982-07-07 Int Rectifier Corp High power mosfet
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
JPS5898967A (en) * 1981-12-09 1983-06-13 Nec Corp semiconductor equipment
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure

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