JPS5494884A - Screening method of base-emitter voltages of transistors - Google Patents

Screening method of base-emitter voltages of transistors

Info

Publication number
JPS5494884A
JPS5494884A JP216478A JP216478A JPS5494884A JP S5494884 A JPS5494884 A JP S5494884A JP 216478 A JP216478 A JP 216478A JP 216478 A JP216478 A JP 216478A JP S5494884 A JPS5494884 A JP S5494884A
Authority
JP
Japan
Prior art keywords
collector
base
transistors
emitter voltages
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP216478A
Other languages
Japanese (ja)
Inventor
Yusuke Yamada
Shigeo Hamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP216478A priority Critical patent/JPS5494884A/en
Publication of JPS5494884A publication Critical patent/JPS5494884A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To measure base-emitter voltages by using a diode-connected reference transistor under the same base-collector voltage.
CONSTITUTION: The collector and base of a reference transistor 2 is shorted and the collector current Ic2 is made constant by a resistor 7. Ic2 is set at the collector current value desired to measure. A DC ammeter 6 is put to the collector of the transistor to be measured 1 and its collector- emitter voltage is made the same as that of the reference transistor 2. When the collector current Icl is measured, VBE1 may be screened with good accuracy. Since VBEI is nearly the same in temperature characteristic as VBE2, it is unaffected by ambient temperature.
COPYRIGHT: (C)1979,JPO&Japio
JP216478A 1978-01-11 1978-01-11 Screening method of base-emitter voltages of transistors Pending JPS5494884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP216478A JPS5494884A (en) 1978-01-11 1978-01-11 Screening method of base-emitter voltages of transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP216478A JPS5494884A (en) 1978-01-11 1978-01-11 Screening method of base-emitter voltages of transistors

Publications (1)

Publication Number Publication Date
JPS5494884A true JPS5494884A (en) 1979-07-26

Family

ID=11521711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP216478A Pending JPS5494884A (en) 1978-01-11 1978-01-11 Screening method of base-emitter voltages of transistors

Country Status (1)

Country Link
JP (1) JPS5494884A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347679A (en) * 1986-08-16 1988-02-29 Sony Corp Circuit for measuring characteristic of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347679A (en) * 1986-08-16 1988-02-29 Sony Corp Circuit for measuring characteristic of semiconductor device

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