JPS5496372A - Method of forming pattern - Google Patents
Method of forming patternInfo
- Publication number
- JPS5496372A JPS5496372A JP11246678A JP11246678A JPS5496372A JP S5496372 A JPS5496372 A JP S5496372A JP 11246678 A JP11246678 A JP 11246678A JP 11246678 A JP11246678 A JP 11246678A JP S5496372 A JPS5496372 A JP S5496372A
- Authority
- JP
- Japan
- Prior art keywords
- forming pattern
- pattern
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2045—Electron beam lithography processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84552777A | 1977-10-26 | 1977-10-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5496372A true JPS5496372A (en) | 1979-07-30 |
| JPS5653207B2 JPS5653207B2 (en) | 1981-12-17 |
Family
ID=25295430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11246678A Granted JPS5496372A (en) | 1977-10-26 | 1978-09-14 | Method of forming pattern |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5496372A (en) |
| DE (1) | DE2840553A1 (en) |
| FR (1) | FR2407499A1 (en) |
| GB (1) | GB2007158B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3171312D1 (en) * | 1981-08-07 | 1985-08-14 | Fraunhofer Ges Forschung | Process for making microstructures on solid state bodies |
| DE3235064A1 (en) * | 1982-09-22 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | TUNNEL CATHODE MASK FOR ELECTRON LITHOGRAPHY, METHOD FOR THEIR PRODUCTION AND METHOD FOR THEIR OPERATION |
| DE3533632A1 (en) * | 1985-09-20 | 1987-04-02 | Siemens Ag | Method for producing a gate array at the customer's |
| US6042994A (en) * | 1998-01-20 | 2000-03-28 | Alliedsignal Inc. | Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3080481A (en) * | 1959-04-17 | 1963-03-05 | Sprague Electric Co | Method of making transistors |
-
1978
- 1978-09-14 JP JP11246678A patent/JPS5496372A/en active Granted
- 1978-09-18 DE DE19782840553 patent/DE2840553A1/en not_active Withdrawn
- 1978-09-26 FR FR7828300A patent/FR2407499A1/en active Granted
- 1978-10-19 GB GB7841204A patent/GB2007158B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2007158A (en) | 1979-05-16 |
| GB2007158B (en) | 1982-02-10 |
| FR2407499B1 (en) | 1982-07-09 |
| FR2407499A1 (en) | 1979-05-25 |
| JPS5653207B2 (en) | 1981-12-17 |
| DE2840553A1 (en) | 1979-05-03 |
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