JPS5496372A - Method of forming pattern - Google Patents

Method of forming pattern

Info

Publication number
JPS5496372A
JPS5496372A JP11246678A JP11246678A JPS5496372A JP S5496372 A JPS5496372 A JP S5496372A JP 11246678 A JP11246678 A JP 11246678A JP 11246678 A JP11246678 A JP 11246678A JP S5496372 A JPS5496372 A JP S5496372A
Authority
JP
Japan
Prior art keywords
forming pattern
pattern
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11246678A
Other languages
Japanese (ja)
Other versions
JPS5653207B2 (en
Inventor
Niigeru Burooaasu Aretsuku
Jiyon Kuomo Jieroomu
Benjiyamin Raibouitsut Robaato
Uiriamu Moruzen Jiyuni Uorutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5496372A publication Critical patent/JPS5496372A/en
Publication of JPS5653207B2 publication Critical patent/JPS5653207B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045Electron beam lithography processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP11246678A 1977-10-26 1978-09-14 Method of forming pattern Granted JPS5496372A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84552777A 1977-10-26 1977-10-26

Publications (2)

Publication Number Publication Date
JPS5496372A true JPS5496372A (en) 1979-07-30
JPS5653207B2 JPS5653207B2 (en) 1981-12-17

Family

ID=25295430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11246678A Granted JPS5496372A (en) 1977-10-26 1978-09-14 Method of forming pattern

Country Status (4)

Country Link
JP (1) JPS5496372A (en)
DE (1) DE2840553A1 (en)
FR (1) FR2407499A1 (en)
GB (1) GB2007158B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3171312D1 (en) * 1981-08-07 1985-08-14 Fraunhofer Ges Forschung Process for making microstructures on solid state bodies
DE3235064A1 (en) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München TUNNEL CATHODE MASK FOR ELECTRON LITHOGRAPHY, METHOD FOR THEIR PRODUCTION AND METHOD FOR THEIR OPERATION
DE3533632A1 (en) * 1985-09-20 1987-04-02 Siemens Ag Method for producing a gate array at the customer's
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3080481A (en) * 1959-04-17 1963-03-05 Sprague Electric Co Method of making transistors

Also Published As

Publication number Publication date
GB2007158A (en) 1979-05-16
GB2007158B (en) 1982-02-10
FR2407499B1 (en) 1982-07-09
FR2407499A1 (en) 1979-05-25
JPS5653207B2 (en) 1981-12-17
DE2840553A1 (en) 1979-05-03

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