JPS5498183A - Semiconductor device graphic display method - Google Patents

Semiconductor device graphic display method

Info

Publication number
JPS5498183A
JPS5498183A JP492878A JP492878A JPS5498183A JP S5498183 A JPS5498183 A JP S5498183A JP 492878 A JP492878 A JP 492878A JP 492878 A JP492878 A JP 492878A JP S5498183 A JPS5498183 A JP S5498183A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor device
laser beam
graphs
affixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP492878A
Other languages
Japanese (ja)
Inventor
Akitoshi Tezuka
Tsutomu Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP492878A priority Critical patent/JPS5498183A/en
Publication of JPS5498183A publication Critical patent/JPS5498183A/en
Pending legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE: To display graphs simply and effectively on a surface of semiconductor device by using laser beams.
CONSTITUTION: When laser beam 3 is applied to the surface of semiconductor device 1 on which thin film 2 is closely affixed, a portion of film 2 is melted and separated from the thin film, thus affixing to the main surface. This material 4 is made from the thin film after is has chemically reacted in the atmosphere while melting and affixing and firmly adheres mechanically and chemically. Graphs are made by moving the position where the laser beam is applied. This method does not require any surface treatment before and after the laser beam is applied, requires no organic solvent and is capable of displaying graphs within a very short time. Clear display can be obtained by properly selecting a color tone and the material of thin film 2 so as to insure that the color tone on the surface of device 1 becomes complememtary color.
COPYRIGHT: (C)1979,JPO&Japio
JP492878A 1978-01-19 1978-01-19 Semiconductor device graphic display method Pending JPS5498183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP492878A JPS5498183A (en) 1978-01-19 1978-01-19 Semiconductor device graphic display method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP492878A JPS5498183A (en) 1978-01-19 1978-01-19 Semiconductor device graphic display method

Publications (1)

Publication Number Publication Date
JPS5498183A true JPS5498183A (en) 1979-08-02

Family

ID=11597249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP492878A Pending JPS5498183A (en) 1978-01-19 1978-01-19 Semiconductor device graphic display method

Country Status (1)

Country Link
JP (1) JPS5498183A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166050A (en) * 1984-12-07 1986-07-26 Fujitsu Ltd Marking method for ic package
JPS6220355A (en) * 1985-07-18 1987-01-28 Matsushita Electric Works Ltd Marking method for resin-sealed electronic component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4885234A (en) * 1972-02-16 1973-11-12
JPS50774A (en) * 1973-05-02 1975-01-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4885234A (en) * 1972-02-16 1973-11-12
JPS50774A (en) * 1973-05-02 1975-01-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166050A (en) * 1984-12-07 1986-07-26 Fujitsu Ltd Marking method for ic package
JPS6220355A (en) * 1985-07-18 1987-01-28 Matsushita Electric Works Ltd Marking method for resin-sealed electronic component

Similar Documents

Publication Publication Date Title
JPS5267353A (en) Electrostatic chuck
JPS53112061A (en) Wiring substrate of semiconductor chip
JPS5222881A (en) Thin film etching system on semiconductor base plate
JPS52119938A (en) Unit for image multiplication change
JPS5236468A (en) Shallow diffusion method
JPS5244154A (en) Control electrode
JPS54866A (en) Molecular beam crystal growing device
JPS529370A (en) Color tv receiver tube conduction material coating method and equipmen t
JPS5270756A (en) Impurity diffusion method
JPS5332677A (en) Electron beam exposure apparatus
JPS52106673A (en) Crystal growing method and device thereof
JPS5357763A (en) Diaphragm of electron beam exposure apparatus
JPS5248997A (en) Electrochromic display device
JPS5417677A (en) Manufacture of semiconductor
JPS51140561A (en) Liquid phase epitaxial growing method
JPS53134745A (en) Method of plasma-etching thin oxide film
JPS5382262A (en) Producing apparatus of semiconductor device
JPS52119179A (en) Electron beam exposing method
JPS51122458A (en) Method of mounting electrode on transparent strong dielectric porcelai n
JPS51135664A (en) Method for producing a deflecting plate
JPS549958A (en) Production for spacing defining film of liquid crystal diaply panels
JPS5323266A (en) Manufacture of fluorescent screen
JPS53100769A (en) Semiconductor crystal growth apparatus
JPS51132087A (en) Observing method of semiconductor surface defect
JPS5351963A (en) Semiconductor wafer protective film