JPS5498191A - Preparation of photoconductive target - Google Patents
Preparation of photoconductive targetInfo
- Publication number
- JPS5498191A JPS5498191A JP428778A JP428778A JPS5498191A JP S5498191 A JPS5498191 A JP S5498191A JP 428778 A JP428778 A JP 428778A JP 428778 A JP428778 A JP 428778A JP S5498191 A JPS5498191 A JP S5498191A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxygen
- atmosphere containing
- inert gas
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 4
- 229910052760 oxygen Inorganic materials 0.000 abstract 4
- 239000001301 oxygen Substances 0.000 abstract 4
- 239000011669 selenium Substances 0.000 abstract 4
- 239000011261 inert gas Substances 0.000 abstract 3
- 229910052711 selenium Inorganic materials 0.000 abstract 3
- 229910052714 tellurium Inorganic materials 0.000 abstract 3
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012528 membrane Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000008247 solid mixture Substances 0.000 abstract 1
- 239000006104 solid solution Substances 0.000 abstract 1
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To provide infrared ray sensitivity by heat treating CdSe layer in Se or in inert gas atmosphere containing Se and oxygen, thus forming CdTe layer and, then, heat treating CdTe layer in Te or in the inert gas atmosphere containing Te oxygen.
CONSTITUTION: Prepare photosensitive layer 2 by forming on glass face plate 1 a vacuum deposited membrane of single type which is made of II-VI group compound or plural kinds of solid solution or mixture or plural kinds double vacuum deposited membrane. Apply the first heat treatment to this layer 2 at, for example, 400....700 °C in selenium or inert atmosphere containing selenium and oxygen and, then, apply the second heat treatment to this telluric cadmium layer at, for example, 400 °C 700°C in tellurium or inert gas atmosphere containing tellurium and oxygen, thus forming a high resistance material layer 4 on layer 2. Infrared ray sensitivity can be obtained by this invention.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53004287A JPS5826832B2 (en) | 1978-01-20 | 1978-01-20 | Method for manufacturing photoconductive targets |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53004287A JPS5826832B2 (en) | 1978-01-20 | 1978-01-20 | Method for manufacturing photoconductive targets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5498191A true JPS5498191A (en) | 1979-08-02 |
| JPS5826832B2 JPS5826832B2 (en) | 1983-06-06 |
Family
ID=11580303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53004287A Expired JPS5826832B2 (en) | 1978-01-20 | 1978-01-20 | Method for manufacturing photoconductive targets |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5826832B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57208041A (en) * | 1981-06-16 | 1982-12-21 | Toshiba Corp | Photoconductive target and its manufacture |
| US4614891A (en) * | 1983-12-28 | 1986-09-30 | Kabushiki Kaisha Toshiba | Photoconductive target of image pickup tube |
-
1978
- 1978-01-20 JP JP53004287A patent/JPS5826832B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57208041A (en) * | 1981-06-16 | 1982-12-21 | Toshiba Corp | Photoconductive target and its manufacture |
| US4614891A (en) * | 1983-12-28 | 1986-09-30 | Kabushiki Kaisha Toshiba | Photoconductive target of image pickup tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5826832B2 (en) | 1983-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1464755A (en) | Two-phase charge coupled devices | |
| JPS5562778A (en) | Preparation of photoconductor film | |
| JPS56103477A (en) | Photoelectric conversion element | |
| JPS53122356A (en) | X-ray fluorescent film | |
| GB1382865A (en) | Method of making photoconductive film | |
| JPS5739588A (en) | Solid state image pickup device | |
| JPS57197876A (en) | Photoconductive film | |
| JPS5749263A (en) | Manufacture of close contact type image sensor | |
| JPS56132750A (en) | Photoelectric converter and manufacture | |
| JPS57197848A (en) | Semiconductor device and manufacture thereof | |
| JPS57155784A (en) | Photodiode | |
| JPS57208041A (en) | Photoconductive target and its manufacture | |
| JPS5422168A (en) | Glass coating method for semiconductor element | |
| JPS56167240A (en) | Photoelectric converter | |
| JPS53138290A (en) | Sintered-film solar battery of cadmium telluride | |
| JPS5498190A (en) | Preparation of photoconductive target | |
| JPS55115375A (en) | Light detector element | |
| JPS54159194A (en) | Manufacture for cadmium sulfide sintering film | |
| JPS5440073A (en) | Film forming method | |
| JPS5564350A (en) | Radioactive-ray receiving face | |
| JPS5687381A (en) | Photoelectric conversion element | |
| JPS5272162A (en) | Production of semiconductor device | |
| JPS6452342A (en) | Manufacture of superconductive thin film | |
| JPS5659206A (en) | Manufacture of color separation striped filter | |
| JPS5453980A (en) | Photo conductive target |