JPS5498572A - Surface stablization processing method for transistor - Google Patents

Surface stablization processing method for transistor

Info

Publication number
JPS5498572A
JPS5498572A JP541178A JP541178A JPS5498572A JP S5498572 A JPS5498572 A JP S5498572A JP 541178 A JP541178 A JP 541178A JP 541178 A JP541178 A JP 541178A JP S5498572 A JPS5498572 A JP S5498572A
Authority
JP
Japan
Prior art keywords
sio
transistor
stablization
annealing
mixing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP541178A
Other languages
Japanese (ja)
Other versions
JPS5857903B2 (en
Inventor
Hideaki Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP53005411A priority Critical patent/JPS5857903B2/en
Publication of JPS5498572A publication Critical patent/JPS5498572A/en
Publication of JPS5857903B2 publication Critical patent/JPS5857903B2/en
Expired legal-status Critical Current

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  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To make stable the surface for the transistor substrate finished for the formation of emitter layer with annealing under N2+H2 atomosphere.
CONSTITUTION: H2 in the mixing gas of N2 and H2 is bonded with unsaturated Si or excessive Si at the boundary of Si and SiO2, and it is inactive electrically and the boundary active condition is very stabilized. Since H2 in mixing gas is effective with much amount, but it can be remained as about 10% and the treatment temperature is at about 950°C. With this method, increase in hFE at low current region, improvement in noise level, and reduction in leakage can be realized and the performance can be uniformed. Further, SiO2 is also made fine with annealing and no under etching is made at open window.
COPYRIGHT: (C)1979,JPO&Japio
JP53005411A 1978-01-20 1978-01-20 Transistor surface stabilization treatment method Expired JPS5857903B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53005411A JPS5857903B2 (en) 1978-01-20 1978-01-20 Transistor surface stabilization treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53005411A JPS5857903B2 (en) 1978-01-20 1978-01-20 Transistor surface stabilization treatment method

Publications (2)

Publication Number Publication Date
JPS5498572A true JPS5498572A (en) 1979-08-03
JPS5857903B2 JPS5857903B2 (en) 1983-12-22

Family

ID=11610395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53005411A Expired JPS5857903B2 (en) 1978-01-20 1978-01-20 Transistor surface stabilization treatment method

Country Status (1)

Country Link
JP (1) JPS5857903B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885534A (en) * 1981-11-18 1983-05-21 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor silicon
JPS62239548A (en) * 1986-04-10 1987-10-20 Seiko Epson Corp Manufacturing method of semiconductor device
CN103390552A (en) * 2012-05-08 2013-11-13 中国科学院微电子研究所 an annealing system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63193302U (en) * 1987-05-30 1988-12-13

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127575A (en) * 1973-04-06 1974-12-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127575A (en) * 1973-04-06 1974-12-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885534A (en) * 1981-11-18 1983-05-21 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor silicon
JPS62239548A (en) * 1986-04-10 1987-10-20 Seiko Epson Corp Manufacturing method of semiconductor device
CN103390552A (en) * 2012-05-08 2013-11-13 中国科学院微电子研究所 an annealing system

Also Published As

Publication number Publication date
JPS5857903B2 (en) 1983-12-22

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