JPS5498587A - Semiconductor light switch - Google Patents

Semiconductor light switch

Info

Publication number
JPS5498587A
JPS5498587A JP548178A JP548178A JPS5498587A JP S5498587 A JPS5498587 A JP S5498587A JP 548178 A JP548178 A JP 548178A JP 548178 A JP548178 A JP 548178A JP S5498587 A JPS5498587 A JP S5498587A
Authority
JP
Japan
Prior art keywords
diffractive
substrate
type
atoms
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP548178A
Other languages
Japanese (ja)
Inventor
Hitoshi Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP548178A priority Critical patent/JPS5498587A/en
Publication of JPS5498587A publication Critical patent/JPS5498587A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the photo electric conversion efficiency, by making epitaxial growing the N- type AlxGa1-xAs photo conductive layer having greater diffractive ratio on the N type GaAs substrate and providing the electrode via the stripe projection on the surface.
CONSTITUTION: On the N type GaAs substrate 21 in which impurity concentration is 1×1018 to 5 × 1018 atoms/cm3, the N- type AlxGa1-xAs thin layer 22(0<x ≤0.2) in which the impurity concentrations is 1×1013 to 1×1015 atoms/cm3 and the diffractive ratio is greater than that of the substrate 21, is epitaxially grown and it is used for the photo conductive layer. Further, the surface is selectively etched and two stripe projections 23a and 23b are formed, having width Wa and Wb, located at the both sides apart from the groove of width Wo at the center, and by coating the electrodes 25a and 25b such as Au and Ag on the surface, the Shottky junctions 24a and 24b are caused. After that, at the back of the substrate 21, the Au-Ge-Ni electrode 26 is attached in ohmic manner. Thus, the effective diffractive rate is changed at bypass application, allowing to increase the efficiency.
COPYRIGHT: (C)1979,JPO&Japio
JP548178A 1978-01-20 1978-01-20 Semiconductor light switch Pending JPS5498587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP548178A JPS5498587A (en) 1978-01-20 1978-01-20 Semiconductor light switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP548178A JPS5498587A (en) 1978-01-20 1978-01-20 Semiconductor light switch

Publications (1)

Publication Number Publication Date
JPS5498587A true JPS5498587A (en) 1979-08-03

Family

ID=11612428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP548178A Pending JPS5498587A (en) 1978-01-20 1978-01-20 Semiconductor light switch

Country Status (1)

Country Link
JP (1) JPS5498587A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100309U (en) * 1982-12-22 1984-07-06 株式会社日立製作所 Abnormal running detection device for moving objects
JPS59181317A (en) * 1983-03-31 1984-10-15 Sumitomo Electric Ind Ltd light modulation element
JPS6126028A (en) * 1984-07-17 1986-02-05 Hitachi Ltd Optical switch
JPS6136726A (en) * 1984-07-30 1986-02-21 Tech Res & Dev Inst Of Japan Def Agency Optical switch
US5150183A (en) * 1987-07-10 1992-09-22 Kernforschungszentrum Karlsruhe Gmbh Switch matrix including optically non-linear elements
US5153687A (en) * 1991-01-10 1992-10-06 Furukawa Electric Co., Ltd. Semiconductor optical functional device with parabolic wells
JPH0569823U (en) * 1992-02-26 1993-09-21 住友電装株式会社 Wire harness assembly drawing board

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100309U (en) * 1982-12-22 1984-07-06 株式会社日立製作所 Abnormal running detection device for moving objects
JPS59181317A (en) * 1983-03-31 1984-10-15 Sumitomo Electric Ind Ltd light modulation element
JPS6126028A (en) * 1984-07-17 1986-02-05 Hitachi Ltd Optical switch
JPS6136726A (en) * 1984-07-30 1986-02-21 Tech Res & Dev Inst Of Japan Def Agency Optical switch
US5150183A (en) * 1987-07-10 1992-09-22 Kernforschungszentrum Karlsruhe Gmbh Switch matrix including optically non-linear elements
US5153687A (en) * 1991-01-10 1992-10-06 Furukawa Electric Co., Ltd. Semiconductor optical functional device with parabolic wells
JPH0569823U (en) * 1992-02-26 1993-09-21 住友電装株式会社 Wire harness assembly drawing board

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