JPS55111191A - Method of manufacturing semiconductor laser device - Google Patents
Method of manufacturing semiconductor laser deviceInfo
- Publication number
- JPS55111191A JPS55111191A JP1931279A JP1931279A JPS55111191A JP S55111191 A JPS55111191 A JP S55111191A JP 1931279 A JP1931279 A JP 1931279A JP 1931279 A JP1931279 A JP 1931279A JP S55111191 A JPS55111191 A JP S55111191A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- film
- semiconductor laser
- photoetched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000002517 constrictor effect Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To attain an electrical current constriction effect and cause stable single basic transverse mode oscillation with a small spot.
CONSTITUTION: An n-type Alx2Ga1-x2As layer 2, a p-type Alx3Ga1-x3As layer 3, a p-type Alx6Ga1-x6As layer 6 and a p-type GaAs layer 7 are sequentially epitaxially grown on an n-type GaAs substrate 1. After a film 10 of Al2O3, SiO2, Si3N4 or the like is deposited, the film is photoetched at a desired stripe width. The photoetched film is used as a mask to selectively etch the layers 7, 6 to provide a striped laminated assembly. An n-type Alx4Ga1-x4As layer 4 and a p- or n-type GaAs layer 5 are then epitaxially grown. The film 10 is removed. Zinc is diffused into the gaAs layers 5, 7 within a small width. Electrodes 8, 9 are provided. The assembly is divided into semiconductor laser units.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1931279A JPS55111191A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1931279A JPS55111191A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55111191A true JPS55111191A (en) | 1980-08-27 |
Family
ID=11995889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1931279A Pending JPS55111191A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55111191A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4899349A (en) * | 1985-07-18 | 1990-02-06 | Sharp Kabushiki Kaisha | Semiconductor laser device |
-
1979
- 1979-02-20 JP JP1931279A patent/JPS55111191A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4899349A (en) * | 1985-07-18 | 1990-02-06 | Sharp Kabushiki Kaisha | Semiconductor laser device |
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