JPS55111192A - Semiconductor laser and method of fabricating same - Google Patents

Semiconductor laser and method of fabricating same

Info

Publication number
JPS55111192A
JPS55111192A JP1560780A JP1560780A JPS55111192A JP S55111192 A JPS55111192 A JP S55111192A JP 1560780 A JP1560780 A JP 1560780A JP 1560780 A JP1560780 A JP 1560780A JP S55111192 A JPS55111192 A JP S55111192A
Authority
JP
Japan
Prior art keywords
semiconductor laser
fabricating same
fabricating
same
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1560780A
Other languages
English (en)
Inventor
Peeteru De Baarudo Yan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS55111192A publication Critical patent/JPS55111192A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1560780A 1979-02-13 1980-02-13 Semiconductor laser and method of fabricating same Pending JPS55111192A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7901122A NL7901122A (nl) 1979-02-13 1979-02-13 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
JPS55111192A true JPS55111192A (en) 1980-08-27

Family

ID=19832631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1560780A Pending JPS55111192A (en) 1979-02-13 1980-02-13 Semiconductor laser and method of fabricating same

Country Status (8)

Country Link
JP (1) JPS55111192A (ja)
AU (1) AU5537180A (ja)
DE (1) DE3003667A1 (ja)
FR (1) FR2449348A1 (ja)
GB (1) GB2040552A (ja)
IT (1) IT1140545B (ja)
NL (1) NL7901122A (ja)
SE (1) SE8001054L (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215087A (ja) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol 面発光形レ−ザ素子の製造方法
JPS6242532A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 化合物半導体の表面処理方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
NL8300631A (nl) * 1983-02-21 1984-09-17 Philips Nv Inrichting voor het opwekken van coherente straling.
JPS60100489A (ja) * 1983-08-02 1985-06-04 Furukawa Electric Co Ltd:The 半導体レ−ザ
FR2575870B1 (fr) * 1985-01-10 1987-01-30 Sermage Bernard Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active
NL8602653A (nl) * 1986-10-23 1988-05-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
JPH04199589A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp 可視光面発光レーザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215087A (ja) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol 面発光形レ−ザ素子の製造方法
JPS6242532A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 化合物半導体の表面処理方法

Also Published As

Publication number Publication date
AU5537180A (en) 1980-08-21
NL7901122A (nl) 1980-08-15
SE8001054L (sv) 1980-08-14
IT8019822A0 (it) 1980-02-08
DE3003667A1 (de) 1980-08-21
FR2449348A1 (fr) 1980-09-12
GB2040552A (en) 1980-08-28
IT1140545B (it) 1986-10-01

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