JPS55124268A - Junction type field effect transistor and method of fabricating the same - Google Patents

Junction type field effect transistor and method of fabricating the same

Info

Publication number
JPS55124268A
JPS55124268A JP3275079A JP3275079A JPS55124268A JP S55124268 A JPS55124268 A JP S55124268A JP 3275079 A JP3275079 A JP 3275079A JP 3275079 A JP3275079 A JP 3275079A JP S55124268 A JPS55124268 A JP S55124268A
Authority
JP
Japan
Prior art keywords
gate
field effect
effect transistor
improve
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3275079A
Other languages
Japanese (ja)
Inventor
Tatsunori Nakajima
Kosei Kajiwara
Kazutoshi Nagano
Kosuke Yasuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3275079A priority Critical patent/JPS55124268A/en
Publication of JPS55124268A publication Critical patent/JPS55124268A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase the gate capacity of and improve the mutual conductance of a junction type field effect transistor by forming a lower gate region under a gate region. CONSTITUTION:An SiO2 film 12 is formed on a supphire sabstarte 11, an opening is perforated for a gate, B is implanted through the opening, and a p<+>-type impurity layer 13 is formed. Then, n-type silicon layer 14 is epitaxially grown, an SiO2 film 15 is formed thereon, and source and drain regions 17 and 18 are diffused thereon. At this time impurity layer 13 is diffused to form a lower gate region 19. Then, upper p<+>-type gate region 20 is formed in shallow state. Thus, channel region is restricted in the vicinity of the surface of the silicon layer to increase the mobility thereof to improve gm and increase the gate capacity in the amount corresponding to the lower gate so as to improve the performance index.
JP3275079A 1979-03-20 1979-03-20 Junction type field effect transistor and method of fabricating the same Pending JPS55124268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3275079A JPS55124268A (en) 1979-03-20 1979-03-20 Junction type field effect transistor and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3275079A JPS55124268A (en) 1979-03-20 1979-03-20 Junction type field effect transistor and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS55124268A true JPS55124268A (en) 1980-09-25

Family

ID=12367516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3275079A Pending JPS55124268A (en) 1979-03-20 1979-03-20 Junction type field effect transistor and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55124268A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
US10854408B2 (en) 2015-01-30 2020-12-01 Tyco Electronics Austria Gmbh Magnetic flux assembly for a relay, and relay

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
US10854408B2 (en) 2015-01-30 2020-12-01 Tyco Electronics Austria Gmbh Magnetic flux assembly for a relay, and relay

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