JPS55126596A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS55126596A
JPS55126596A JP3168979A JP3168979A JPS55126596A JP S55126596 A JPS55126596 A JP S55126596A JP 3168979 A JP3168979 A JP 3168979A JP 3168979 A JP3168979 A JP 3168979A JP S55126596 A JPS55126596 A JP S55126596A
Authority
JP
Japan
Prior art keywords
crucible
heater
crystal
pulled
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3168979A
Other languages
Japanese (ja)
Other versions
JPS615440B2 (en
Inventor
Sadao Matsumura
Toshiharu Ito
Satao Yashiro
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3168979A priority Critical patent/JPS55126596A/en
Publication of JPS55126596A publication Critical patent/JPS55126596A/en
Publication of JPS615440B2 publication Critical patent/JPS615440B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To produce a high quality single crystal of a large diameter and a long size in a high yield by melting starting material in a crucible with a heater and starting a relatively lowering motion of the crucible and the heater at a specified speed when a crystal pulled reaches a specified size.
CONSTITUTION: Heater 2 and crucible 1 are set so that central position A of the effective heating length of heater 2 coincides with central position B of crucible 1 housing starting material such as LiTaO3 in the longitudinal direction. The material in crucible 1 is melted by high frequency heating with heater 2. Seed crystal 5 supported by holder 4 is then pulled, and when a crystal pulled is grown to a length of 0.70dW0.95d with respect to parallel length portion l of predetermined diameter d, crucible 1 and heater 2 are subjected to a relatively lowering motion so that relatively lowering speed Vw becomes 0.6W0.9 time as high as lowering speed Vw of the surface of the melt in crucible 1.
COPYRIGHT: (C)1980,JPO&Japio
JP3168979A 1979-03-20 1979-03-20 Production of single crystal Granted JPS55126596A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3168979A JPS55126596A (en) 1979-03-20 1979-03-20 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3168979A JPS55126596A (en) 1979-03-20 1979-03-20 Production of single crystal

Publications (2)

Publication Number Publication Date
JPS55126596A true JPS55126596A (en) 1980-09-30
JPS615440B2 JPS615440B2 (en) 1986-02-18

Family

ID=12338040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3168979A Granted JPS55126596A (en) 1979-03-20 1979-03-20 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS55126596A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203792A (en) * 1983-04-30 1984-11-17 Fujitsu Ltd Process for growing single crystal
CN103643292A (en) * 2013-12-27 2014-03-19 中国工程物理研究院化工材料研究所 Method and device for growing near-stoichiometric-ratio lithium niobate crystals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203792A (en) * 1983-04-30 1984-11-17 Fujitsu Ltd Process for growing single crystal
CN103643292A (en) * 2013-12-27 2014-03-19 中国工程物理研究院化工材料研究所 Method and device for growing near-stoichiometric-ratio lithium niobate crystals

Also Published As

Publication number Publication date
JPS615440B2 (en) 1986-02-18

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