JPS55129992A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS55129992A
JPS55129992A JP3591579A JP3591579A JPS55129992A JP S55129992 A JPS55129992 A JP S55129992A JP 3591579 A JP3591579 A JP 3591579A JP 3591579 A JP3591579 A JP 3591579A JP S55129992 A JPS55129992 A JP S55129992A
Authority
JP
Japan
Prior art keywords
word line
becomes
time
conductive state
selection time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3591579A
Other languages
Japanese (ja)
Inventor
Teruo Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3591579A priority Critical patent/JPS55129992A/en
Publication of JPS55129992A publication Critical patent/JPS55129992A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To make a semiconductor memory high-speed by making discharging of a word line rapid only at a non-selection time without influence upon the charging mechanism of the word line at a selection time. CONSTITUTION:In case that word line 5 is selected, transistor Tr 3b becomes a break state, and the collector becomes the ground potential. At this time, the base potential of Tr 11b is lower than the base potential of Tr 11a, and Tr 11b becomes a break state, and Tr 11a becomes a conductive state. That is, no influence is given to the charging mechanism of word line 5. In case that word line 5 is not selected, Tr 3b becomes a conductive state, and the collector is lowered by voltage drop components dependent upon load resistance 2. At this time, the base potential of Tr 11b becomes higher than the base of Tr 11a, and Tr 11b becomes a conductive state. That is, a current is pulled out from word line 5 by constant-current source 12. Thus, discharging of word line 5 is made rapid only at a non-selection time. Further, electric charge is discharged from word line 5 through no impedance by constant-current source 12.
JP3591579A 1979-03-24 1979-03-24 Semiconductor memory Pending JPS55129992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3591579A JPS55129992A (en) 1979-03-24 1979-03-24 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3591579A JPS55129992A (en) 1979-03-24 1979-03-24 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS55129992A true JPS55129992A (en) 1980-10-08

Family

ID=12455319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3591579A Pending JPS55129992A (en) 1979-03-24 1979-03-24 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55129992A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3305427A1 (en) 1982-02-26 1983-09-15 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven SEMICONDUCTOR MEMORY WITH A DYNAMIC DISCHARGE CIRCUIT
JPS58161196A (en) * 1982-03-19 1983-09-24 Fujitsu Ltd Semiconductor storage device
JPS59132490A (en) * 1983-01-20 1984-07-30 Hitachi Ltd semiconductor memory
JPH0773675A (en) * 1990-05-31 1995-03-17 Digital Equip Corp <Dec> Memory selection circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3305427A1 (en) 1982-02-26 1983-09-15 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven SEMICONDUCTOR MEMORY WITH A DYNAMIC DISCHARGE CIRCUIT
JPS58161196A (en) * 1982-03-19 1983-09-24 Fujitsu Ltd Semiconductor storage device
JPS59132490A (en) * 1983-01-20 1984-07-30 Hitachi Ltd semiconductor memory
JPH0773675A (en) * 1990-05-31 1995-03-17 Digital Equip Corp <Dec> Memory selection circuit

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