JPS55138228A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55138228A JPS55138228A JP4455679A JP4455679A JPS55138228A JP S55138228 A JPS55138228 A JP S55138228A JP 4455679 A JP4455679 A JP 4455679A JP 4455679 A JP4455679 A JP 4455679A JP S55138228 A JPS55138228 A JP S55138228A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal rod
- facet
- photodetector
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Hall/Mr Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a photodetector of high resistance and good element characteristics by a method wherein, when a semiconductor photodetector is formed by using a semiconductor single crystal rod formed by pulling method, the direction of current flowing in the single crystal rod is specified. CONSTITUTION:A wafer is made by slicing an InSb single crystal rod formed by pulling method in its axial direction. The following procedures are used when a semiconductor photodetector is made by using this wafer. That is, when InSb single crystal rod 32 is pulled in direction <211> from melt 31, facet 21 is produced on its one end in direction <111>, and band region 22 with high impurity concentration extends in an island form in direction <110> in parallel with the boundary line between this and the off-facet. Since the appearance of band region 22 is an unavoidable phenomenon, when a photodetector is formed by alicing single crystal rod 32, the direction of current flow is chosen in the directions shown by arrows 11 so that lines parallel to the boundary line between the facet and off-facet produced in the growth stage do not cross both terminal electrodes constituting the current path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4455679A JPS55138228A (en) | 1979-04-12 | 1979-04-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4455679A JPS55138228A (en) | 1979-04-12 | 1979-04-12 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55138228A true JPS55138228A (en) | 1980-10-28 |
Family
ID=12694766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4455679A Pending JPS55138228A (en) | 1979-04-12 | 1979-04-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55138228A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108166060A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of indium antimonide<211>The preparation method of direction monocrystalline |
| CN108166061A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of method for reducing Insb Single Crystals dislocation |
| CN109280978A (en) * | 2018-11-29 | 2019-01-29 | 云南北方昆物光电科技发展有限公司 | A kind of preparation method of low dislocation indium antimonide<111>direction monocrystalline |
-
1979
- 1979-04-12 JP JP4455679A patent/JPS55138228A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108166060A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of indium antimonide<211>The preparation method of direction monocrystalline |
| CN108166061A (en) * | 2017-12-25 | 2018-06-15 | 云南北方昆物光电科技发展有限公司 | A kind of method for reducing Insb Single Crystals dislocation |
| CN109280978A (en) * | 2018-11-29 | 2019-01-29 | 云南北方昆物光电科技发展有限公司 | A kind of preparation method of low dislocation indium antimonide<111>direction monocrystalline |
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