JPS55140261A - Substrate potential generator - Google Patents

Substrate potential generator

Info

Publication number
JPS55140261A
JPS55140261A JP4860279A JP4860279A JPS55140261A JP S55140261 A JPS55140261 A JP S55140261A JP 4860279 A JP4860279 A JP 4860279A JP 4860279 A JP4860279 A JP 4860279A JP S55140261 A JPS55140261 A JP S55140261A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
substrate
type
diffused
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4860279A
Other languages
Japanese (ja)
Other versions
JPS6244693B2 (en
Inventor
Masaaki Kimata
Koichiro Masuko
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4860279A priority Critical patent/JPS55140261A/en
Publication of JPS55140261A publication Critical patent/JPS55140261A/en
Publication of JPS6244693B2 publication Critical patent/JPS6244693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the erronenous operation of a dynamic circuit by forming a rectifying MOSFET used for a substrate potential generator integrated on the same substrate as a dynamic memory circuit with polycrystalline silicon isolated form the substrate as a channel. CONSTITUTION:Two n<+>-type regions 202 are diffused in a p<->-type silicon substrate 201, a shallow n<+>-type region 226 is formed therebetween, a gate electrode 213 such as polycrystalline silicon or the like is coated through a gate oxide film 210 on the region 226, and a MOS capacitor 206 is formed thereat. An SiO2 film 231 is coated on the position adjacent to the condenser 206 of the substrate 201, a p-type polycrystalline silicon layer 232 is accumulated on the surface, three n<+>-type polycrystalline silicon layers 203, 204, 205 are diffused to become source and drain thereon, and the layer 232 is used for the channel regions of the rectifying MOSFET 207 and 208. That is, gate oxide films 211, 212 of the FET207, 208 and gate electrodes 214, 215 of polycrystalline silicon or the like are formed on the two channels.
JP4860279A 1979-04-19 1979-04-19 Substrate potential generator Granted JPS55140261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4860279A JPS55140261A (en) 1979-04-19 1979-04-19 Substrate potential generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4860279A JPS55140261A (en) 1979-04-19 1979-04-19 Substrate potential generator

Publications (2)

Publication Number Publication Date
JPS55140261A true JPS55140261A (en) 1980-11-01
JPS6244693B2 JPS6244693B2 (en) 1987-09-22

Family

ID=12807947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4860279A Granted JPS55140261A (en) 1979-04-19 1979-04-19 Substrate potential generator

Country Status (1)

Country Link
JP (1) JPS55140261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229866A (en) * 1985-11-29 1987-10-08 Nippon Denso Co Ltd Semiconductor device
US4907047A (en) * 1985-08-09 1990-03-06 Nec Corporation Semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907047A (en) * 1985-08-09 1990-03-06 Nec Corporation Semiconductor memory device
JPS62229866A (en) * 1985-11-29 1987-10-08 Nippon Denso Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6244693B2 (en) 1987-09-22

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