JPS55146984A - Photoelectric converting device and its manufacturing - Google Patents

Photoelectric converting device and its manufacturing

Info

Publication number
JPS55146984A
JPS55146984A JP5408579A JP5408579A JPS55146984A JP S55146984 A JPS55146984 A JP S55146984A JP 5408579 A JP5408579 A JP 5408579A JP 5408579 A JP5408579 A JP 5408579A JP S55146984 A JPS55146984 A JP S55146984A
Authority
JP
Japan
Prior art keywords
layer
selenium
clear
electrode
selenium layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5408579A
Other languages
Japanese (ja)
Other versions
JPS639390B2 (en
Inventor
Yoshihiko Mizushima
Akitsu Takeda
Hideo Ito
Kazumi Komiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
NTT Inc
Original Assignee
Origin Electric Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Origin Electric Co Ltd
Priority to JP5408579A priority Critical patent/JPS55146984A/en
Publication of JPS55146984A publication Critical patent/JPS55146984A/en
Publication of JPS639390B2 publication Critical patent/JPS639390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an excellent open terminal voltage, short-circuit current and photosensitivity and to prevent the peeling of selenium layer surely by forming a cadmium selenide layer and a selenium layer of specific thicknesses on a clear electrode mounted on a clear substrate. CONSTITUTION:The clear electrode 7 of a metal oxide such as tin or indium oxide or metal thin film such as gold or aluminum is attached to the clear substrate 6 such as glass, the cadmium selenide layer 8 of 0.01-2mum thickness is formed on it by vacuum evaporation or spattering method. Similarly the crystal selenium layer 9 of 0.01-4mum thickness is provided on it in order to produce the hetero junction between both layers 8, 9. After this, the electrode 11 is formed on the layer 9, and the device is heat-treated at temperature of more than 180 deg.C and less than the melting point of selenium for 10min-2hr in order to improve the characteristic of the junction 10. In this way, the selenium layer is not peeled off, a photoelectric converting device suitable to an image sensor can be obtained.
JP5408579A 1979-05-04 1979-05-04 Photoelectric converting device and its manufacturing Granted JPS55146984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5408579A JPS55146984A (en) 1979-05-04 1979-05-04 Photoelectric converting device and its manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5408579A JPS55146984A (en) 1979-05-04 1979-05-04 Photoelectric converting device and its manufacturing

Publications (2)

Publication Number Publication Date
JPS55146984A true JPS55146984A (en) 1980-11-15
JPS639390B2 JPS639390B2 (en) 1988-02-29

Family

ID=12960773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5408579A Granted JPS55146984A (en) 1979-05-04 1979-05-04 Photoelectric converting device and its manufacturing

Country Status (1)

Country Link
JP (1) JPS55146984A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111121835A (en) * 2019-11-21 2020-05-08 电子科技大学 Pyroelectric/photoelectric dual-functional integrated sensing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5294786A (en) * 1976-02-04 1977-08-09 Exxon Research Engineering Co Highly efficient selenium hetero junction solar battery

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5294786A (en) * 1976-02-04 1977-08-09 Exxon Research Engineering Co Highly efficient selenium hetero junction solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111121835A (en) * 2019-11-21 2020-05-08 电子科技大学 Pyroelectric/photoelectric dual-functional integrated sensing device

Also Published As

Publication number Publication date
JPS639390B2 (en) 1988-02-29

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