JPS55148421A - Refining method of chemical compound semiconductor crystal - Google Patents

Refining method of chemical compound semiconductor crystal

Info

Publication number
JPS55148421A
JPS55148421A JP5651279A JP5651279A JPS55148421A JP S55148421 A JPS55148421 A JP S55148421A JP 5651279 A JP5651279 A JP 5651279A JP 5651279 A JP5651279 A JP 5651279A JP S55148421 A JPS55148421 A JP S55148421A
Authority
JP
Japan
Prior art keywords
compound semiconductor
chemical compound
indium
solution
grams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5651279A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Akio Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5651279A priority Critical patent/JPS55148421A/en
Publication of JPS55148421A publication Critical patent/JPS55148421A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To accomplish a high-purity refining of a chemical compound semiconductor having the segregation coefficient of nearly 1, by dissolving a chemical compound semiconductor crystal by heating in a solvent, thereby generating the vapor consisting of constituting elements and then by dissolving said vapor in a solvent consisting of other constituting elements to give a supersaturated solution. CONSTITUTION:The case of an indium arsenide chemical compound semiconductor refining is now taken as an example. 8 grams of commercially available indium arsenide, and 3 grams of indium to be used as a solvent for the above are put in the storage hole of a carbon jig 1. About 1-1.5 grams of indium with the purity necessary to an element formation is put in the storage hole 3, which is then sealed hermetically and heated at 850 deg.-900 deg. in a reaction tube 5 and maintained in that condition for 5-50 hours. Thus, an arsenic atom with a high vapor pressure is evaporated from the solution 7 of the indium arsenide, and is dissolved in the indium solution contained in the storage hole 3. As the atoms of impurities such as silicon and aluminum remain in the indium arsenide solution 7, a high-purity chemical compound semiconductor can be obtained.
JP5651279A 1979-05-09 1979-05-09 Refining method of chemical compound semiconductor crystal Pending JPS55148421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5651279A JPS55148421A (en) 1979-05-09 1979-05-09 Refining method of chemical compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5651279A JPS55148421A (en) 1979-05-09 1979-05-09 Refining method of chemical compound semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS55148421A true JPS55148421A (en) 1980-11-19

Family

ID=13029169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5651279A Pending JPS55148421A (en) 1979-05-09 1979-05-09 Refining method of chemical compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS55148421A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134417A (en) * 1983-12-23 1985-07-17 Stanley Electric Co Ltd Liquid phase growth method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134417A (en) * 1983-12-23 1985-07-17 Stanley Electric Co Ltd Liquid phase growth method

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