JPS55160475A - Amorphous thin film solar battery - Google Patents
Amorphous thin film solar batteryInfo
- Publication number
- JPS55160475A JPS55160475A JP6854979A JP6854979A JPS55160475A JP S55160475 A JPS55160475 A JP S55160475A JP 6854979 A JP6854979 A JP 6854979A JP 6854979 A JP6854979 A JP 6854979A JP S55160475 A JPS55160475 A JP S55160475A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous
- solar battery
- thin film
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain an amorphous thin film solar battery having high photoelectric conversion efficiency and large area with preferable reproducibility by employing amorphous high molecular nitride formed by plasma synthesization as a Schottky barrier material. CONSTITUTION:An Al-Ag grid electrode 2 is evaporated with mask on a glass substrate 1, and an In2O3-SnO2 film 3 is formed thereon. Then, an amorphous high molecular nitride film 4 is formed by plasma synthesization thereon. Thereafter, amorphous Si film (a-SiFX) is formed thereon. Subsequently, an N<+> type amorphous Si film [a-SiFX(n<+>)] 7 is formed thereon. Then, an Al-Ag back electrode 8 is evaporated with mask, and an Si3N4 film 9 is coated thereon. In this manner, a Schottky barrier is formed between the layers 4 and 6, and a photovoltaic force is picked up between the electrodes 2 and 8 in response to the incident light irradiated from the side of the substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6854979A JPS55160475A (en) | 1979-05-31 | 1979-05-31 | Amorphous thin film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6854979A JPS55160475A (en) | 1979-05-31 | 1979-05-31 | Amorphous thin film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55160475A true JPS55160475A (en) | 1980-12-13 |
Family
ID=13376942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6854979A Pending JPS55160475A (en) | 1979-05-31 | 1979-05-31 | Amorphous thin film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55160475A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6489568A (en) * | 1987-09-30 | 1989-04-04 | Sharp Kk | Manufacture of semiconductor device |
-
1979
- 1979-05-31 JP JP6854979A patent/JPS55160475A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6489568A (en) * | 1987-09-30 | 1989-04-04 | Sharp Kk | Manufacture of semiconductor device |
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