JPS55165682A - Mos field effect semiconductor device - Google Patents

Mos field effect semiconductor device

Info

Publication number
JPS55165682A
JPS55165682A JP7415779A JP7415779A JPS55165682A JP S55165682 A JPS55165682 A JP S55165682A JP 7415779 A JP7415779 A JP 7415779A JP 7415779 A JP7415779 A JP 7415779A JP S55165682 A JPS55165682 A JP S55165682A
Authority
JP
Japan
Prior art keywords
transistor
resistance
high voltage
terminal
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7415779A
Other languages
Japanese (ja)
Inventor
Hiroshi Nabeya
Takeo Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7415779A priority Critical patent/JPS55165682A/en
Publication of JPS55165682A publication Critical patent/JPS55165682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To protect an FET surely even when a momentary DC high voltage is developed by providing a resistance, MOSFET and bipolar transistor between the input and earth terminals of the MOSFET that is to be prevented from breakdown. CONSTITUTION:The P-N-P bipolar transistor 8 is provided between the input terminal T and earth terminal E of the first MOSFET2, which is to be prevented from breakdown, in parallel. Similarly a series circuit that consists of the resistance 9 and the second MOSFET10 is connected to said elements in parallel, and the base of the transistor 8 is connected to the gate of the transistor 10 through the connection point of both the resistance 9 and the element 10. In this way, even when high voltage is applied to the terminal T, current flows through the transistor 8, and the high voltage is not applied to the gate of the element 2. At this time, the transistor 8 conducts according to a time constant of both the capacitance 10a of the element 10 and the resistance 9, and the applied high voltage is discharged to the terminal E.
JP7415779A 1979-06-11 1979-06-11 Mos field effect semiconductor device Pending JPS55165682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7415779A JPS55165682A (en) 1979-06-11 1979-06-11 Mos field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7415779A JPS55165682A (en) 1979-06-11 1979-06-11 Mos field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS55165682A true JPS55165682A (en) 1980-12-24

Family

ID=13539032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7415779A Pending JPS55165682A (en) 1979-06-11 1979-06-11 Mos field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165682A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143860A (en) * 1981-01-26 1982-09-06 Philips Nv Semiconductor device
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US5041889A (en) * 1989-03-16 1991-08-20 Siemens Aktiengesellschaft Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors
EP0625289A4 (en) * 1992-02-04 1995-01-18 Cirrus Logic Inc DERIVATIVE CIRCUIT FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGES.
US5539233A (en) * 1993-07-22 1996-07-23 Texas Instruments Incorporated Controlled low collector breakdown voltage vertical transistor for ESD protection circuits
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143860A (en) * 1981-01-26 1982-09-06 Philips Nv Semiconductor device
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US5041889A (en) * 1989-03-16 1991-08-20 Siemens Aktiengesellschaft Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors
EP0625289A4 (en) * 1992-02-04 1995-01-18 Cirrus Logic Inc DERIVATIVE CIRCUIT FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGES.
US5539233A (en) * 1993-07-22 1996-07-23 Texas Instruments Incorporated Controlled low collector breakdown voltage vertical transistor for ESD protection circuits
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides

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