JPS55165689A - Preparation of light emission semiconductor device - Google Patents

Preparation of light emission semiconductor device

Info

Publication number
JPS55165689A
JPS55165689A JP7336979A JP7336979A JPS55165689A JP S55165689 A JPS55165689 A JP S55165689A JP 7336979 A JP7336979 A JP 7336979A JP 7336979 A JP7336979 A JP 7336979A JP S55165689 A JPS55165689 A JP S55165689A
Authority
JP
Japan
Prior art keywords
layer
light emission
grown
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7336979A
Other languages
Japanese (ja)
Inventor
Kenji Yano
Osamu Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7336979A priority Critical patent/JPS55165689A/en
Publication of JPS55165689A publication Critical patent/JPS55165689A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To improve the efficiency of the light emission by a method wherein a conductivity type compound layer is epitaxially grown on the same conductivity type compound semiconductor substrate in a liquid phase, the supporting layer is laminated on it, the substrate is removed from the element and a reverse conductivity type layer is diffused in the exposed layer in the first stage of the growth to make it a light emission region. CONSTITUTION:When the N-type Ga1-XAlXAs layer 22 is grown on the N-type GaAs substrate 21 in a liquid phase, it is grown to a layer of about 50mum thickness, temperature of the melt is regulated to 900 deg.C, X value to 0.3, and temperature is gradually reduced so that the X value may become 0.1. Next the N-type Ga1-XAlXAs layer 23 that is a mere supporter layer to be the electrode contact is grown to the -100mum thickness, the substrate 21 is removed from the element by the etching method. After this, Zn is diffused in the exposed surface of the layer 22 to form the P-type regions 24 of several mum depth, the light emission region is composed of the layer 22 and the region 24, the surface of region 24 is coated with SiO2 film 25, and the light emission window 25A is opened in the film 25. In this way, the layer in the first stage of the growth, the thickness and X value of which can easily be controlled, is used for the light emission region.
JP7336979A 1979-06-11 1979-06-11 Preparation of light emission semiconductor device Pending JPS55165689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7336979A JPS55165689A (en) 1979-06-11 1979-06-11 Preparation of light emission semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7336979A JPS55165689A (en) 1979-06-11 1979-06-11 Preparation of light emission semiconductor device

Publications (1)

Publication Number Publication Date
JPS55165689A true JPS55165689A (en) 1980-12-24

Family

ID=13516187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7336979A Pending JPS55165689A (en) 1979-06-11 1979-06-11 Preparation of light emission semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165689A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141121A (en) * 1984-12-14 1986-06-28 Showa Denko Kk Formation of p-n junction
JPH01244674A (en) * 1988-03-26 1989-09-29 Mitsubishi Kasei Corp Manufacture of blue-light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141121A (en) * 1984-12-14 1986-06-28 Showa Denko Kk Formation of p-n junction
JPH01244674A (en) * 1988-03-26 1989-09-29 Mitsubishi Kasei Corp Manufacture of blue-light emitting diode

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