JPS5517465A - Measuring method of high temperature performance of semiconductor device - Google Patents

Measuring method of high temperature performance of semiconductor device

Info

Publication number
JPS5517465A
JPS5517465A JP9069178A JP9069178A JPS5517465A JP S5517465 A JPS5517465 A JP S5517465A JP 9069178 A JP9069178 A JP 9069178A JP 9069178 A JP9069178 A JP 9069178A JP S5517465 A JPS5517465 A JP S5517465A
Authority
JP
Japan
Prior art keywords
high temperature
measuring section
measurement
temperature
characteristic measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9069178A
Other languages
Japanese (ja)
Inventor
Minoru Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9069178A priority Critical patent/JPS5517465A/en
Publication of JPS5517465A publication Critical patent/JPS5517465A/en
Pending legal-status Critical Current

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Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To reduce the cost of measurement, by locally heating only the measured element at the performance measuring section.
CONSTITUTION: The heating source 6 partially using the laser light, infrared ray or the like is placed at the measuring section 4. Further, the measured element 5 is fed to the measuring section 4 from the part feeder 1 via the shooter 2, and the local heater source 6 heats up before or after the measuring various characteristics so that specified temperature can be obtained. The characteristics are measured after heated up to the given temperature, and the operation of the local heating source 6 is stopped at the same time when the measurement is finished. Thus, by only adding the local heater to conventional characteristic measurement unit at normal temperature, the high temperature characteristic measurement is possible. Further, the characteristic measurement at normal and high temperature can be done once to achieve desired object.
COPYRIGHT: (C)1980,JPO&Japio
JP9069178A 1978-07-24 1978-07-24 Measuring method of high temperature performance of semiconductor device Pending JPS5517465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9069178A JPS5517465A (en) 1978-07-24 1978-07-24 Measuring method of high temperature performance of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9069178A JPS5517465A (en) 1978-07-24 1978-07-24 Measuring method of high temperature performance of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5517465A true JPS5517465A (en) 1980-02-06

Family

ID=14005544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9069178A Pending JPS5517465A (en) 1978-07-24 1978-07-24 Measuring method of high temperature performance of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5517465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163380U (en) * 1984-04-09 1985-10-30 関西日本電気株式会社 Characteristic inspection equipment for semiconductor devices
JPS6243141A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Semiconductor testing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163380U (en) * 1984-04-09 1985-10-30 関西日本電気株式会社 Characteristic inspection equipment for semiconductor devices
JPS6243141A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Semiconductor testing apparatus

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