JPS5521169A - Bipolar integrated circuit - Google Patents

Bipolar integrated circuit

Info

Publication number
JPS5521169A
JPS5521169A JP9433778A JP9433778A JPS5521169A JP S5521169 A JPS5521169 A JP S5521169A JP 9433778 A JP9433778 A JP 9433778A JP 9433778 A JP9433778 A JP 9433778A JP S5521169 A JPS5521169 A JP S5521169A
Authority
JP
Japan
Prior art keywords
layer wiring
region
melting point
silicide
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9433778A
Other languages
Japanese (ja)
Inventor
Toru Mochizuki
Takamaro Mizoguchi
Kenji Shibata
Takanari Tsujimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9433778A priority Critical patent/JPS5521169A/en
Publication of JPS5521169A publication Critical patent/JPS5521169A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To raise a transmission speed of a signal on a first layer wiring by making up the first layer wiring having one portion connected to a semiconductor substrate of a silicide having a high melting point.
CONSTITUTION: On a silicon oxidization film 8, is provided a first layer wiring 10... comprising a high melting point silicide for example, MoSi2, formed by a spattering vaporation or a patterning processing and connected to a collector region 5, base region 6 and emitter region 7 respectively. One of the first layer wiring 10... is connected to a collector region 5 of one of semiconductor elements adjacent to another and sectioned by a P+ separation region 4 and a base region 6 of other semiconductor element respectively. A specific resistance on the first layer wiring 10... can be less reduced and because a thickness is also reduced, a high speed operation can be established.
COPYRIGHT: (C)1980,JPO&Japio
JP9433778A 1978-08-02 1978-08-02 Bipolar integrated circuit Pending JPS5521169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9433778A JPS5521169A (en) 1978-08-02 1978-08-02 Bipolar integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9433778A JPS5521169A (en) 1978-08-02 1978-08-02 Bipolar integrated circuit

Publications (1)

Publication Number Publication Date
JPS5521169A true JPS5521169A (en) 1980-02-15

Family

ID=14107462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9433778A Pending JPS5521169A (en) 1978-08-02 1978-08-02 Bipolar integrated circuit

Country Status (1)

Country Link
JP (1) JPS5521169A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107555A (en) * 1982-12-03 1984-06-21 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107555A (en) * 1982-12-03 1984-06-21 Fujitsu Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
JPS53132275A (en) Semiconductor device and its production
JPS5743438A (en) Semiconductor device and manufacture thereof
JPS56162864A (en) Semiconductor device
JPS5521169A (en) Bipolar integrated circuit
JPS52103971A (en) Semiconductor device
JPS577157A (en) Semiconductor device
JPS5380183A (en) Semiconductor device
JPS5571055A (en) Semiconductor device and its manufacturing method
JPS5718354A (en) Semiconductor integrated circuit
JPS5333077A (en) Semiconductor integrated circuit
JPS5352388A (en) Semiconductor device
JPS5341986A (en) Production of semiconductor unit
JPS57166048A (en) Semiconductor integrated circuit
JPS54107277A (en) Production of semiconductor device
JPS53125774A (en) Bipolar transistor and its manufacture
JPS52125285A (en) Semiconductor device
JPS5269649A (en) Semiconductor distortion element
JPS52155986A (en) Semiconductor device
JPS5515250A (en) Manufacturing method for semiconductor device
JPS52104081A (en) Production of semiconductor unit
JPS5341987A (en) Semiconductor unit and its production
JPS5544711A (en) Semiconductor device
JPS53107280A (en) Semiconductor device
JPS52147084A (en) Production of semiconductor device
JPS5541787A (en) Semiconductor device