JPS5522874A - Semiconductor integrated circuit device with lateral transistor - Google Patents

Semiconductor integrated circuit device with lateral transistor

Info

Publication number
JPS5522874A
JPS5522874A JP9689478A JP9689478A JPS5522874A JP S5522874 A JPS5522874 A JP S5522874A JP 9689478 A JP9689478 A JP 9689478A JP 9689478 A JP9689478 A JP 9689478A JP S5522874 A JPS5522874 A JP S5522874A
Authority
JP
Japan
Prior art keywords
layer
base
transistor
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9689478A
Other languages
Japanese (ja)
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9689478A priority Critical patent/JPS5522874A/en
Publication of JPS5522874A publication Critical patent/JPS5522874A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To remarkably raise the various characteristics of a lateral transistor by raising the impurity density of a base layer in the range from a collector to an emitter.
CONSTITUTION: An N-epi layer 14 on a P-type Si substrate 11 is separated by P+ layers 13 and 15. An ion is implanted into the upper of an N+buried layer 12 and is processed in the high temperature N2 gas to form an N+layer 18. Next, a P+ emitter 19 and collector 20 are selectively formed in the layer 18 and adjacent to that. Because a base impurity density distribution of a PNP lateral transistor formed by such a process becomes greater in the emitter region than in the collector region, a resistance rbb is lowered, and an occurrence of a punch-through may be difficult in a narrow base width, therefore, BVCEO becomes great. Because an accelerating field is generated in the base layer, an hFE is increased and, when the base width is reduced, an fT is raised. In a combination of the transistor having a high performance with a vertical type transistor, a mutual compensated IC device having a high performance and a high resistance to voltage can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP9689478A 1978-08-08 1978-08-08 Semiconductor integrated circuit device with lateral transistor Pending JPS5522874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9689478A JPS5522874A (en) 1978-08-08 1978-08-08 Semiconductor integrated circuit device with lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9689478A JPS5522874A (en) 1978-08-08 1978-08-08 Semiconductor integrated circuit device with lateral transistor

Publications (1)

Publication Number Publication Date
JPS5522874A true JPS5522874A (en) 1980-02-18

Family

ID=14177076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9689478A Pending JPS5522874A (en) 1978-08-08 1978-08-08 Semiconductor integrated circuit device with lateral transistor

Country Status (1)

Country Link
JP (1) JPS5522874A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4592014A (en) * 1983-08-22 1986-05-27 Hitachi, Ltd. Magnetic bubble memory device
JPH02284431A (en) * 1989-04-26 1990-11-21 Sumitomo Electric Ind Ltd heterojunction bipolar transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105485A (en) * 1973-02-07 1974-10-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105485A (en) * 1973-02-07 1974-10-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4592014A (en) * 1983-08-22 1986-05-27 Hitachi, Ltd. Magnetic bubble memory device
JPH02284431A (en) * 1989-04-26 1990-11-21 Sumitomo Electric Ind Ltd heterojunction bipolar transistor

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