JPS5523085A - Production of silicon film - Google Patents

Production of silicon film

Info

Publication number
JPS5523085A
JPS5523085A JP5390379A JP5390379A JPS5523085A JP S5523085 A JPS5523085 A JP S5523085A JP 5390379 A JP5390379 A JP 5390379A JP 5390379 A JP5390379 A JP 5390379A JP S5523085 A JPS5523085 A JP S5523085A
Authority
JP
Japan
Prior art keywords
gas
substrates
silicon
plasma
cpd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5390379A
Other languages
Japanese (ja)
Inventor
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5390379A priority Critical patent/JPS5523085A/en
Publication of JPS5523085A publication Critical patent/JPS5523085A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a high quality silicon (cpd.) deposited film with gas plasma by controlling an electric current for static magnetic field producing coils set outside a reaction tube to prevent mixing of pollutants from electrodes and to maintain discharge stable. CONSTITUTION:Silicon substrates 12 are mounted on heating graphite plate 13, gas introduction part 1 is attached, and cock 20 is opened to exhaust air in the apparatus with vacuum pump 22. Next cock 5 is opened to introduce silane gas or mixed gas of silane gas and NH3 or CO2, and the gas is spouted into vacuum vessel 10 through spouting holes 9 of cover 8. By applying power to plasma generating high frequency electrodes 11 plasma is generated in container 10. At this time, in order to control the depositing speed and quality of silicon (cpd.) films to be formed on the surfaces of substrates 12, an electric current is supplied to heater 15 buried in plate 13 to adjust the temp. of substrates, and plasma generating high frequency power is regulated.
JP5390379A 1979-04-27 1979-04-27 Production of silicon film Pending JPS5523085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5390379A JPS5523085A (en) 1979-04-27 1979-04-27 Production of silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5390379A JPS5523085A (en) 1979-04-27 1979-04-27 Production of silicon film

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9630373A Division JPS5329476B2 (en) 1973-08-28 1973-08-28

Publications (1)

Publication Number Publication Date
JPS5523085A true JPS5523085A (en) 1980-02-19

Family

ID=12955669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5390379A Pending JPS5523085A (en) 1979-04-27 1979-04-27 Production of silicon film

Country Status (1)

Country Link
JP (1) JPS5523085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166971A (en) * 1986-12-27 1988-07-11 Anelva Corp Surface treatment method and device
JP2006502452A (en) * 2002-08-15 2006-01-19 ノースロップ グラマン コーポレーション Moisture barrier sealing of optical fiber coil
CN107435138A (en) * 2016-03-31 2017-12-05 住友化学株式会社 The analysis method of stacked film and its manufacture method and stacked film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SOLID STATE ELECT.=1965 *
THIN SOLID FILMS=1969 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166971A (en) * 1986-12-27 1988-07-11 Anelva Corp Surface treatment method and device
JP2006502452A (en) * 2002-08-15 2006-01-19 ノースロップ グラマン コーポレーション Moisture barrier sealing of optical fiber coil
CN107435138A (en) * 2016-03-31 2017-12-05 住友化学株式会社 The analysis method of stacked film and its manufacture method and stacked film

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