JPS5526660A - Semiconductor device and method of manufacturing of the same - Google Patents
Semiconductor device and method of manufacturing of the sameInfo
- Publication number
- JPS5526660A JPS5526660A JP9965978A JP9965978A JPS5526660A JP S5526660 A JPS5526660 A JP S5526660A JP 9965978 A JP9965978 A JP 9965978A JP 9965978 A JP9965978 A JP 9965978A JP S5526660 A JPS5526660 A JP S5526660A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- type
- region
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000010079 rubber tapping Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To materialize a speed-up with a reduced junction capacity by providing a non-dope multi-crystal Si layer on an island-like layer in mounting a transistor and a resistor in a single chip.
CONSTITUTION: An N-type layer 22 is epi-grown on a P-type Si substrate 21 to be covered with a SiO2 film 23, and a through-hole 24a to 24c are provided to form a P+-type isolation region 25a to 25c by a diffusion. Subsequently, a through- opening 26a to 26c are given to the film 23 on an island-like layer 23a to 23d to grow an undoped multi-crystal Si layer 27a to 27c thereon and a non-dope multi- crystal Si layer 28a to 28c on the film 23. Thereafter, the full surface is covered with a SiO2 film 29 and a through-hole 30 is provided. An N+-type region 31 to be entered to a layer 22b is diffusion-grown, through-hole 32 and 33 are formed to diffusion-grow a P-type base region 34 reaching the layers 22b and 22c, as well as a resistor region 35. Next, an opening hole 38 and 39 are again provided in the film 29 to diffusion-grow an N++-type emitter region 40 and collector tapping region 41.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9965978A JPS5526660A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device and method of manufacturing of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9965978A JPS5526660A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device and method of manufacturing of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5526660A true JPS5526660A (en) | 1980-02-26 |
Family
ID=14253165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9965978A Pending JPS5526660A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device and method of manufacturing of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5526660A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63500627A (en) * | 1985-08-19 | 1988-03-03 | モトロ−ラ・インコ−ポレ−テッド | Manufacturing of semiconductor devices with buried oxide |
| JPS6383936U (en) * | 1986-11-19 | 1988-06-01 | ||
| US4759590A (en) * | 1985-11-05 | 1988-07-26 | Toyota Jidosha Kabushiki Kaisha | Anti-skid braking system of four-wheel drive vehicle and method for controlling the same |
| JPH04315604A (en) * | 1991-01-29 | 1992-11-06 | Fumiaki Hasegawa | Snow removing vehicle |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933434A (en) * | 1972-07-20 | 1974-03-27 |
-
1978
- 1978-08-16 JP JP9965978A patent/JPS5526660A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933434A (en) * | 1972-07-20 | 1974-03-27 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63500627A (en) * | 1985-08-19 | 1988-03-03 | モトロ−ラ・インコ−ポレ−テッド | Manufacturing of semiconductor devices with buried oxide |
| US4759590A (en) * | 1985-11-05 | 1988-07-26 | Toyota Jidosha Kabushiki Kaisha | Anti-skid braking system of four-wheel drive vehicle and method for controlling the same |
| JPS6383936U (en) * | 1986-11-19 | 1988-06-01 | ||
| JPH04315604A (en) * | 1991-01-29 | 1992-11-06 | Fumiaki Hasegawa | Snow removing vehicle |
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