JPS5527471A - Oxide film forming method for granular silicon for flux - Google Patents
Oxide film forming method for granular silicon for fluxInfo
- Publication number
- JPS5527471A JPS5527471A JP10101678A JP10101678A JPS5527471A JP S5527471 A JPS5527471 A JP S5527471A JP 10101678 A JP10101678 A JP 10101678A JP 10101678 A JP10101678 A JP 10101678A JP S5527471 A JPS5527471 A JP S5527471A
- Authority
- JP
- Japan
- Prior art keywords
- granular
- granular material
- hopper
- silicon
- peroxide solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Powder Metallurgy (AREA)
Abstract
PURPOSE:To manufacture the product of uniform particle size being uniformly coated with the oxide film at a high productivity, by stirring and heating the kneaded material consisting of granular silicon as the base material and the peroxide solution, and after that, by further heating to higher temperatures. CONSTITUTION:The granular metallic silicon or silicon alloy and the peroxide solution at a specified proportion are charged into the mixer and are thoroughly kneaded; hereby, the peroxide solution is uniformly applied to the surface of the granular silicon. This granular material is discharged from the mixer, and is stored in the hopper, and then, is supplied from this hopper to the external combustion type rotary drier continuously. Within the rotary drier, the granular material is heated to about 400 deg.C while being stirred, and is mutually unbound from other pieces; as a result, the deposit of peroxide is formed on the surface of granular material. This granular material is continuously discharged from the drier and is stored in the hopper; from this hopper, the granular material is continuously charged into the rotary kiln. The granular material is heated to about 800 deg.C in the rotary kiln, and is taken out as the product, being followed by the cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53101016A JPS605525B2 (en) | 1978-08-18 | 1978-08-18 | Method for forming oxide film on silicon powder for welding agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53101016A JPS605525B2 (en) | 1978-08-18 | 1978-08-18 | Method for forming oxide film on silicon powder for welding agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527471A true JPS5527471A (en) | 1980-02-27 |
| JPS605525B2 JPS605525B2 (en) | 1985-02-12 |
Family
ID=14289407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53101016A Expired JPS605525B2 (en) | 1978-08-18 | 1978-08-18 | Method for forming oxide film on silicon powder for welding agent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605525B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232201A (en) * | 1983-06-15 | 1984-12-27 | Kobe Steel Ltd | Surface treatment of fe-si powder and granule for welding flux |
| JP2006088455A (en) * | 2004-09-22 | 2006-04-06 | Haruo Okahara | Silicon processing water-soluble cutting agent composition and processing method |
| JP2009182180A (en) * | 2008-01-31 | 2009-08-13 | Tkx:Kk | Method of manufacturing semiconductor wafer, and semiconductor wafer |
| JP2010247255A (en) * | 2009-04-13 | 2010-11-04 | Nippon Steel Corp | Silicon cutting powder oxidation inhibiting method and silicon cutting powder oxidation inhibiting apparatus |
| JP2011206795A (en) * | 2010-03-29 | 2011-10-20 | Nippon Steel & Sumikin Welding Co Ltd | Fe-Si ALLOY POWDER FOR COVERED ELECTRODE AND LOW-HYDROGEN TYPE COVERED ELECTRODE FOR BACK-BEAD WELDING |
-
1978
- 1978-08-18 JP JP53101016A patent/JPS605525B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232201A (en) * | 1983-06-15 | 1984-12-27 | Kobe Steel Ltd | Surface treatment of fe-si powder and granule for welding flux |
| JP2006088455A (en) * | 2004-09-22 | 2006-04-06 | Haruo Okahara | Silicon processing water-soluble cutting agent composition and processing method |
| JP2009182180A (en) * | 2008-01-31 | 2009-08-13 | Tkx:Kk | Method of manufacturing semiconductor wafer, and semiconductor wafer |
| JP2010247255A (en) * | 2009-04-13 | 2010-11-04 | Nippon Steel Corp | Silicon cutting powder oxidation inhibiting method and silicon cutting powder oxidation inhibiting apparatus |
| JP2011206795A (en) * | 2010-03-29 | 2011-10-20 | Nippon Steel & Sumikin Welding Co Ltd | Fe-Si ALLOY POWDER FOR COVERED ELECTRODE AND LOW-HYDROGEN TYPE COVERED ELECTRODE FOR BACK-BEAD WELDING |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605525B2 (en) | 1985-02-12 |
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