JPS5528544B2 - - Google Patents

Info

Publication number
JPS5528544B2
JPS5528544B2 JP627678A JP627678A JPS5528544B2 JP S5528544 B2 JPS5528544 B2 JP S5528544B2 JP 627678 A JP627678 A JP 627678A JP 627678 A JP627678 A JP 627678A JP S5528544 B2 JPS5528544 B2 JP S5528544B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP627678A
Other languages
Japanese (ja)
Other versions
JPS53147462A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS53147462A publication Critical patent/JPS53147462A/ja
Publication of JPS5528544B2 publication Critical patent/JPS5528544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP627678A 1977-05-26 1978-01-25 Molecular beam epitaxial device Granted JPS53147462A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80082777A 1977-05-26 1977-05-26

Publications (2)

Publication Number Publication Date
JPS53147462A JPS53147462A (en) 1978-12-22
JPS5528544B2 true JPS5528544B2 (fr) 1980-07-29

Family

ID=25179475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP627678A Granted JPS53147462A (en) 1977-05-26 1978-01-25 Molecular beam epitaxial device

Country Status (6)

Country Link
JP (1) JPS53147462A (fr)
CA (1) CA1102013A (fr)
DE (1) DE2806766A1 (fr)
FR (1) FR2391769A1 (fr)
GB (1) GB1598051A (fr)
IT (1) IT1109159B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511709A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede
JPS5957416A (ja) * 1982-09-27 1984-04-03 Konishiroku Photo Ind Co Ltd 化合物半導体層の形成方法
GB8324779D0 (en) * 1982-09-29 1983-10-19 Nat Res Dev Depositing film onto substrate
EP0113983B1 (fr) * 1982-12-16 1987-04-22 Fujitsu Limited Fabrication d'un dispositif semi-conducteur au moyen d'épitaxie par faisceau moléculaire
JPS59123226A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造装置
JPS6135510A (ja) * 1984-07-27 1986-02-20 Agency Of Ind Science & Technol 分子線エピタキシ−成長法
JPS61177366A (ja) * 1985-01-31 1986-08-09 Sharp Corp 超微粒子分散基板の製造装置
JPS61214511A (ja) * 1985-03-20 1986-09-24 Sharp Corp 結晶成長方法
JPS61218130A (ja) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体の結晶成長方法
WO1987003740A1 (fr) * 1985-12-09 1987-06-18 Nippon Telegraph And Telephone Corporation Procede de formation d'une fine pellicule de semiconducteur compose
JP2533501B2 (ja) * 1986-09-26 1996-09-11 日本電信電話株式会社 半導体エピタキシヤル成長法
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
JP2671360B2 (ja) * 1988-03-19 1997-10-29 富士通株式会社 反応性ガスエッチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615931A (en) * 1968-12-27 1971-10-26 Bell Telephone Labor Inc Technique for growth of epitaxial compound semiconductor films
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
DE2313846A1 (de) * 1973-03-20 1974-10-03 Siemens Ag Verfahren zur herstellung einer heteroepitaktisch abgeschiedenen schicht eines halbleitermaterials

Also Published As

Publication number Publication date
IT7820149A0 (it) 1978-02-10
CA1102013A (fr) 1981-05-26
IT1109159B (it) 1985-12-16
FR2391769A1 (fr) 1978-12-22
GB1598051A (en) 1981-09-16
FR2391769B1 (fr) 1980-08-29
JPS53147462A (en) 1978-12-22
DE2806766A1 (de) 1978-12-07

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