JPS5529105A - Manufacturing of complementary mos integrated circuit - Google Patents

Manufacturing of complementary mos integrated circuit

Info

Publication number
JPS5529105A
JPS5529105A JP10176178A JP10176178A JPS5529105A JP S5529105 A JPS5529105 A JP S5529105A JP 10176178 A JP10176178 A JP 10176178A JP 10176178 A JP10176178 A JP 10176178A JP S5529105 A JPS5529105 A JP S5529105A
Authority
JP
Japan
Prior art keywords
drain
layer
substrate
selectively
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10176178A
Other languages
Japanese (ja)
Inventor
Hiroyuki Tango
Minoru Kimura
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10176178A priority Critical patent/JPS5529105A/en
Publication of JPS5529105A publication Critical patent/JPS5529105A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make greater the density and speed of a C-MOS by providing an inversion-preventive layer and a field oxide layer in the hollowed portion of a substrate, and forming a source drain and their junction with a gate electrode of poly Si as a mask. CONSTITUTION:A p-type layer 32 is provided by means of ion implantation added to a n-type Si substrate 30, and an etched drain is built up on the substrate 30 by opening a heat-oxidized film 35 at a Si3N4 mask 36 and treating the substrate with a KOH liquid. Then the drain is selectively coated by a layer 34, and P ions are injected into a drain 40. Subsequently, the drain is selectively coated by a layer 33 before being removed by the B ion implantation to a drain 35. A field oxide film 42 is built up by means of wet oxidation so as to prevent the inversion phenomenon. Films 35 and 36 are thence removed, and gate oxide film 45 is coated while injecting channel ions to control threshold voltage, forming a gate electrode of n-type poly Si 46 and wiring selectively. The source drain is formed with the gate electrode as a mask by injecting As and B ions, further diffusing selectively BBr3, POCl3 to form p<++>, n<++> junctions. Addition of electrodes completes the process.
JP10176178A 1978-08-23 1978-08-23 Manufacturing of complementary mos integrated circuit Pending JPS5529105A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10176178A JPS5529105A (en) 1978-08-23 1978-08-23 Manufacturing of complementary mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10176178A JPS5529105A (en) 1978-08-23 1978-08-23 Manufacturing of complementary mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS5529105A true JPS5529105A (en) 1980-03-01

Family

ID=14309208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10176178A Pending JPS5529105A (en) 1978-08-23 1978-08-23 Manufacturing of complementary mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5529105A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586160A (en) * 1981-07-03 1983-01-13 Nec Corp Manufacturing method of semiconductor device
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
US6294973B1 (en) * 1999-04-02 2001-09-25 Hanshin Electric Co., Ltd. Ignition coil for internal combustion engine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586160A (en) * 1981-07-03 1983-01-13 Nec Corp Manufacturing method of semiconductor device
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
US6294973B1 (en) * 1999-04-02 2001-09-25 Hanshin Electric Co., Ltd. Ignition coil for internal combustion engine

Similar Documents

Publication Publication Date Title
JPS5736842A (en) Semiconductor integrated circuit device
JPS5529105A (en) Manufacturing of complementary mos integrated circuit
JPS5458386A (en) Mos semiconductor device
JPS567462A (en) Semiconductor device and its manufacture
JPS56124270A (en) Manufacture of semiconductor device
JPS5736856A (en) Manufacture of complementary type insulated gate field effect semiconductor device
JPS5775460A (en) Manufacture of semiconductor device
JPS5478673A (en) Manufacture of complementary insulator gate field effect transistor
JPS57130473A (en) Mos type semiconductor memory storage
JPS5583263A (en) Mos semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS54139488A (en) Mos semiconductor element and its manufacture
JPS54137985A (en) Field effect semiconductor device of insulation gate type
JPS57107068A (en) Complementary mis semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5513953A (en) Complementary integrated circuit
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5799768A (en) Manufacture of complementary type metal oxide semiconductor device
JPS5748248A (en) Manufacture of semiconductor device
JPS5491066A (en) Field effect transistor of insulation gate type
JPS561572A (en) Manufacture of semiconductor device
JPS5791521A (en) Manufacture of semiconductor device
JPS5680169A (en) Manufacture of semiconductor device
JPS54122982A (en) Manufacture for complementary mos integrated circuit device