JPS5529169A - Variable capacity diode and manufacturing thereof - Google Patents

Variable capacity diode and manufacturing thereof

Info

Publication number
JPS5529169A
JPS5529169A JP10306478A JP10306478A JPS5529169A JP S5529169 A JPS5529169 A JP S5529169A JP 10306478 A JP10306478 A JP 10306478A JP 10306478 A JP10306478 A JP 10306478A JP S5529169 A JPS5529169 A JP S5529169A
Authority
JP
Japan
Prior art keywords
type
ion
variable capacity
type layer
become
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10306478A
Other languages
Japanese (ja)
Inventor
Masaki Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10306478A priority Critical patent/JPS5529169A/en
Publication of JPS5529169A publication Critical patent/JPS5529169A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce noises when variable capacity diode is used in electronic tuning circuits for TV sets, radio receivers and others through a given capacity variation rate against voltage, by defining the inpurity ion concentration profile of variable capacity diode so as to be able to obtain the hyper abrupt step junction.
CONSTITUTION: Epitaxial growth to from an n--type layer with a thickness of 0∼X1 and the inpurity ion concentration of NEP is developed on an n+-type Si substrate. Into this n--type layer, an n-type P is added by diffusion or ion-injection so as for its surface concentration of CS, and its depth to become relatively low and deep respectively, thereby forming an n--type layer shown in the N1 distribution. Afterwards, an n+-type region shown in the distribution N2 is formed by diffusing or ion-injecting As which also ia an n-type so as for its surface concentration CS2 and its depth to become, this time, relatively high as well as shallow respectively. Then, a p+-type layer is formed only on the surface layer by diffusing p-type B, resulting in a hyper abrupt step junction. This enables the reduction of noises in the tuning circuits and further a receiving frequency scale to become regular.
COPYRIGHT: (C)1980,JPO&Japio
JP10306478A 1978-08-23 1978-08-23 Variable capacity diode and manufacturing thereof Pending JPS5529169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10306478A JPS5529169A (en) 1978-08-23 1978-08-23 Variable capacity diode and manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10306478A JPS5529169A (en) 1978-08-23 1978-08-23 Variable capacity diode and manufacturing thereof

Publications (1)

Publication Number Publication Date
JPS5529169A true JPS5529169A (en) 1980-03-01

Family

ID=14344230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10306478A Pending JPS5529169A (en) 1978-08-23 1978-08-23 Variable capacity diode and manufacturing thereof

Country Status (1)

Country Link
JP (1) JPS5529169A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133578A (en) * 1979-04-03 1980-10-17 Matsushita Electronics Corp Variable capacity diode and method of fabricating the same
US4827319A (en) * 1985-12-31 1989-05-02 Thomson-Csf Variable capacity diode with hyperabrupt profile and plane structure and the method of forming same
US5789801A (en) * 1995-11-09 1998-08-04 Endgate Corporation Varactor with electrostatic barrier
DE10392200B4 (en) * 2002-01-18 2009-01-22 Infineon Technologies Ag Manufacturing process and varactor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133578A (en) * 1979-04-03 1980-10-17 Matsushita Electronics Corp Variable capacity diode and method of fabricating the same
US4827319A (en) * 1985-12-31 1989-05-02 Thomson-Csf Variable capacity diode with hyperabrupt profile and plane structure and the method of forming same
US5789801A (en) * 1995-11-09 1998-08-04 Endgate Corporation Varactor with electrostatic barrier
DE10392200B4 (en) * 2002-01-18 2009-01-22 Infineon Technologies Ag Manufacturing process and varactor

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