JPS553143A - Target for electron emission amplifier tube - Google Patents

Target for electron emission amplifier tube

Info

Publication number
JPS553143A
JPS553143A JP7544378A JP7544378A JPS553143A JP S553143 A JPS553143 A JP S553143A JP 7544378 A JP7544378 A JP 7544378A JP 7544378 A JP7544378 A JP 7544378A JP S553143 A JPS553143 A JP S553143A
Authority
JP
Japan
Prior art keywords
layer
active area
target
electron emission
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7544378A
Other languages
Japanese (ja)
Other versions
JPS633469B2 (en
Inventor
Osamu Mitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7544378A priority Critical patent/JPS553143A/en
Publication of JPS553143A publication Critical patent/JPS553143A/en
Publication of JPS633469B2 publication Critical patent/JPS633469B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To improve the frequency characteristics of an electron emission amplifier tube by providing an insulator layer to surround a diode active area in a semiconductor substrate layer.
CONSTITUTION: A diode is formed by providing a semiconductor layer 3 in the vicinity of the surface of a semiconductor layer 2 formed on a semiconductor substrate 1. A porous insulator layer 21 is provided in the layer 2 to surround the periphery of the diode active area, and a porous insulator layer 22 is further provided from the layer 21 on the layer 2 to coat the periphery of the diode active area. A thin metallic layer 5 for passing primary electron is provided on the active area, and a thick metallic layer 6 is provided further on the periphery of the layer 5 to coat only the layer 21 on the layer 22. Since the layer 6 is thus coated on the layer 22 to thereby reduce the static capacity of capacitors C4-C6 as compared with the conventional one to thus reduce the static capacity of the target, it can improve the frequency characteristics of the amplifier.
COPYRIGHT: (C)1980,JPO&Japio
JP7544378A 1978-06-23 1978-06-23 Target for electron emission amplifier tube Granted JPS553143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7544378A JPS553143A (en) 1978-06-23 1978-06-23 Target for electron emission amplifier tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7544378A JPS553143A (en) 1978-06-23 1978-06-23 Target for electron emission amplifier tube

Publications (2)

Publication Number Publication Date
JPS553143A true JPS553143A (en) 1980-01-10
JPS633469B2 JPS633469B2 (en) 1988-01-23

Family

ID=13576385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7544378A Granted JPS553143A (en) 1978-06-23 1978-06-23 Target for electron emission amplifier tube

Country Status (1)

Country Link
JP (1) JPS553143A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227750A (en) * 2006-02-24 2007-09-06 Seiko Instruments Inc Semiconductor device and manufacturing method of semiconductor device
JP2007227749A (en) * 2006-02-24 2007-09-06 Seiko Instruments Inc Semiconductor device, and method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157070A (en) * 1980-05-07 1981-12-04 Fuji Electric Co Ltd Semiconductor radioactive rays detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157070A (en) * 1980-05-07 1981-12-04 Fuji Electric Co Ltd Semiconductor radioactive rays detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227750A (en) * 2006-02-24 2007-09-06 Seiko Instruments Inc Semiconductor device and manufacturing method of semiconductor device
JP2007227749A (en) * 2006-02-24 2007-09-06 Seiko Instruments Inc Semiconductor device, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS633469B2 (en) 1988-01-23

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