JPS553632A - Manufacturing silicon carbide substrate - Google Patents

Manufacturing silicon carbide substrate

Info

Publication number: JPS553632A
Authority: JP; Japan
Prior art keywords: substrate; sic; specimine; polycrystal; support
Prior art date: 1978-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP7500578A

Other languages

English (en)

Other versions

JPS609659B2 (ja

Inventor

Toshiki Inooku

Takeshi Sakurai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-06-20

Filing date

1978-06-20

Publication date

1980-01-11

1978-06-20 Application filed by Sharp Corp filed Critical Sharp Corp

1978-06-20 Priority to JP53075005A priority Critical patent/JPS609659B2/ja

1980-01-11 Publication of JPS553632A publication Critical patent/JPS553632A/ja

1985-03-12 Publication of JPS609659B2 publication Critical patent/JPS609659B2/ja

Status Expired legal-status Critical Current

Links

239000000758 substrate Substances 0.000 title abstract 10
238000004519 manufacturing process Methods 0.000 title 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
229910010271 silicon carbide Inorganic materials 0.000 title 1
239000010410 layer Substances 0.000 abstract 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
239000007789 gas Substances 0.000 abstract 2
229910002804 graphite Inorganic materials 0.000 abstract 2
239000010439 graphite Substances 0.000 abstract 2
229910003910 SiCl4 Inorganic materials 0.000 abstract 1
239000012159 carrier gas Substances 0.000 abstract 1
230000009977 dual effect Effects 0.000 abstract 1
239000007792 gaseous phase Substances 0.000 abstract 1
238000010438 heat treatment Methods 0.000 abstract 1
230000008018 melting Effects 0.000 abstract 1
238000002844 melting Methods 0.000 abstract 1
239000010453 quartz Substances 0.000 abstract 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
229910001220 stainless steel Inorganic materials 0.000 abstract 1
239000010935 stainless steel Substances 0.000 abstract 1
239000002344 surface layer Substances 0.000 abstract 1

Landscapes

Led Devices (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)

JP53075005A 1978-06-20 1978-06-20 炭化珪素基板の製造方法 Expired JPS609659B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP53075005A JPS609659B2 (ja)	1978-06-20	1978-06-20	炭化珪素基板の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP53075005A JPS609659B2 (ja)	1978-06-20	1978-06-20	炭化珪素基板の製造方法

Publications (2)

Publication Number	Publication Date
JPS553632A true JPS553632A (en)	1980-01-11
JPS609659B2 JPS609659B2 (ja)	1985-03-12

Family

ID=13563642

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP53075005A Expired JPS609659B2 (ja)	1978-06-20	1978-06-20	炭化珪素基板の製造方法

Country Status (1)

Country	Link
JP (1)	JPS609659B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20100092666A1 (en) *	2006-12-25	2010-04-15	Tokyo Electron Limited	Film deposition apparatus and film deposition method

1978
- 1978-06-20 JP JP53075005A patent/JPS609659B2/ja not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20100092666A1 (en) *	2006-12-25	2010-04-15	Tokyo Electron Limited	Film deposition apparatus and film deposition method
US8696814B2 (en) *	2006-12-25	2014-04-15	Tokyo Electron Limited	Film deposition apparatus and film deposition method

Also Published As

Publication number	Publication date
JPS609659B2 (ja)	1985-03-12

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