JPS553632A - Manufacturing silicon carbide substrate - Google Patents
Manufacturing silicon carbide substrateInfo
- Publication number
- JPS553632A JPS553632A JP7500578A JP7500578A JPS553632A JP S553632 A JPS553632 A JP S553632A JP 7500578 A JP7500578 A JP 7500578A JP 7500578 A JP7500578 A JP 7500578A JP S553632 A JPS553632 A JP S553632A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- specimine
- polycrystal
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 10
- 238000004519 manufacturing process Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To obtain an SiC substrate containing polycrystal Si by placing an Si substrate on a specimine table having a surface layer containing C, growing an SiC layer on the surface and sides in gaseous phase, heating the substrate to melt it to the temperature at or above the melting point of Si and not to damage SiC, and then condensing it.
CONSTITUTION: A water-cool dual vertical quargz reaction tube 2 with a gas inlet port 18 at the top and working coils 8 outside of it is placed on a stainless steel flange 10 having a gas exhaust port 12 and a support which supports a quartz support pole 16. Then, a graphite support 4, on the top of which a specimine talbe 6 made of SiC coated graphite is provided, is inserted into the support pole 16, and an Si substrate 28 is placed on the specimine table 6. In this constitution, the substrate 28 is heated to the range of 1,100 to 1,200°C, and a 3C-type SiC layer 30 is grown on the substrate 28, and SiC polycrystal layers 31 and 29 are grown on the sides and the back of the substrate, by the use of SiCl4 containing carrier gas. Then the temperature is raised up to the range of 1,410 to 1,440°C to melt only the substrate 28, thereafter it is cooled, whereby the SiC substrate, in which polycrystal Si is included, can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53075005A JPS609659B2 (en) | 1978-06-20 | 1978-06-20 | Method for manufacturing silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53075005A JPS609659B2 (en) | 1978-06-20 | 1978-06-20 | Method for manufacturing silicon carbide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS553632A true JPS553632A (en) | 1980-01-11 |
| JPS609659B2 JPS609659B2 (en) | 1985-03-12 |
Family
ID=13563642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53075005A Expired JPS609659B2 (en) | 1978-06-20 | 1978-06-20 | Method for manufacturing silicon carbide substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609659B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
-
1978
- 1978-06-20 JP JP53075005A patent/JPS609659B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
| US8696814B2 (en) * | 2006-12-25 | 2014-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS609659B2 (en) | 1985-03-12 |
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