JPS553645A - Semiconductor rectifier - Google Patents

Semiconductor rectifier

Info

Publication number
JPS553645A
JPS553645A JP7542978A JP7542978A JPS553645A JP S553645 A JPS553645 A JP S553645A JP 7542978 A JP7542978 A JP 7542978A JP 7542978 A JP7542978 A JP 7542978A JP S553645 A JPS553645 A JP S553645A
Authority
JP
Japan
Prior art keywords
electrode
bonded
rectifier
rectifier elements
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7542978A
Other languages
Japanese (ja)
Inventor
Isahiko Kubota
Yoshiharu Yotsumoto
Shuji Sugioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7542978A priority Critical patent/JPS553645A/en
Publication of JPS553645A publication Critical patent/JPS553645A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Synchronous Machinery (AREA)

Abstract

PURPOSE: To enhance semiconductor device heat radiation, its electrode is bonded to a heat radiator with its entire surface of the main face.
CONSTITUTION: A first electrode plate 21 is fixed to a second electrode 23 by use of good heat conductor 22 such as prepreg. First rectifier elements 24, 24', 24" are attached to the first electrode 21 with ground electrode and the second electrode 23 is provided with second rectifier elements 25, 25', 25" having opposing porality to the first rectifier by use of ground electrode. A pair of the first and second rectifier elements is attached to a terminal plate 26, preferably contouring the first and second electrode elevation. This arrangement provides the first electrode 21 bonded to the heat radiator with its entire area of its main surface, thereby to greatly enhance the effect of radiation, resulting in reduced bonded area and production cost.
COPYRIGHT: (C)1980,JPO&Japio
JP7542978A 1978-06-23 1978-06-23 Semiconductor rectifier Pending JPS553645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7542978A JPS553645A (en) 1978-06-23 1978-06-23 Semiconductor rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7542978A JPS553645A (en) 1978-06-23 1978-06-23 Semiconductor rectifier

Publications (1)

Publication Number Publication Date
JPS553645A true JPS553645A (en) 1980-01-11

Family

ID=13575954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7542978A Pending JPS553645A (en) 1978-06-23 1978-06-23 Semiconductor rectifier

Country Status (1)

Country Link
JP (1) JPS553645A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156373U (en) * 1980-04-22 1981-11-21
JPH01157252A (en) * 1987-09-02 1989-06-20 Nippon Denso Co Ltd Rectifier for ac generator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156373U (en) * 1980-04-22 1981-11-21
JPH01157252A (en) * 1987-09-02 1989-06-20 Nippon Denso Co Ltd Rectifier for ac generator

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