JPS5538653A - Magnetic bubble memory element - Google Patents

Magnetic bubble memory element

Info

Publication number
JPS5538653A
JPS5538653A JP11078678A JP11078678A JPS5538653A JP S5538653 A JPS5538653 A JP S5538653A JP 11078678 A JP11078678 A JP 11078678A JP 11078678 A JP11078678 A JP 11078678A JP S5538653 A JPS5538653 A JP S5538653A
Authority
JP
Japan
Prior art keywords
detectors
odd
constitution
pair
magnetic bubble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11078678A
Other languages
Japanese (ja)
Other versions
JPS6138549B2 (en
Inventor
Minoru Hiroshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11078678A priority Critical patent/JPS5538653A/en
Publication of JPS5538653A publication Critical patent/JPS5538653A/en
Publication of JPS6138549B2 publication Critical patent/JPS6138549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866—Detecting magnetic domains

Abstract

PURPOSE:To improve the S/N ratio of a detection output by reducing the number of bonding pads of a detector to half by connecting odd and even read major read lines, differing in magnetic bubble transfer direction, to a pair of magnetic bubble detectors. CONSTITUTION:Magnetic bubbles passing through reprogate circuit R from even- bit minor loop (me) and odd-bit minor loop Mo corresponding to wire information are transferred to a pair of main and sub detectors D1 and D2 generating read electric signals by even and odd major word lines RMLe and RMLo differing in transfer direction and joining together. In this constitution, detection lines are shortened and detectors can be provided near the element to improve S/N, in comparison with the constitution with detectors provided corresponding to respective even and odd minor loops, so that bonding pads will be reduced in number to half because of only one pair of detectors.
JP11078678A 1978-09-11 1978-09-11 Magnetic bubble memory element Granted JPS5538653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11078678A JPS5538653A (en) 1978-09-11 1978-09-11 Magnetic bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11078678A JPS5538653A (en) 1978-09-11 1978-09-11 Magnetic bubble memory element

Publications (2)

Publication Number Publication Date
JPS5538653A true JPS5538653A (en) 1980-03-18
JPS6138549B2 JPS6138549B2 (en) 1986-08-29

Family

ID=14544583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11078678A Granted JPS5538653A (en) 1978-09-11 1978-09-11 Magnetic bubble memory element

Country Status (1)

Country Link
JP (1) JPS5538653A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113185A (en) * 1979-02-22 1980-09-01 Nec Corp Magnetic bubble memory element
JPS5837895A (en) * 1981-08-31 1983-03-05 Fujitsu Ltd Driving method of magnetic bubble memory device
JPS5856274A (en) * 1981-09-30 1983-04-02 Hitachi Ltd Sense amplifier of magnetic bubble memory
JPS5883381A (en) * 1981-11-09 1983-05-19 Fujitsu Ltd Magnetic bubble memory element
WO1985000244A1 (en) * 1983-06-29 1985-01-17 Burroughs Corporation Bubble memory which transfers bubbles in both right-to-left and left-to-right sps loops to provide a short access time
US6973005B2 (en) * 2001-12-12 2005-12-06 Micron Technology, Inc. Flash array implementation with local and global bit lines

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113185A (en) * 1979-02-22 1980-09-01 Nec Corp Magnetic bubble memory element
JPS5837895A (en) * 1981-08-31 1983-03-05 Fujitsu Ltd Driving method of magnetic bubble memory device
JPS5856274A (en) * 1981-09-30 1983-04-02 Hitachi Ltd Sense amplifier of magnetic bubble memory
JPS5883381A (en) * 1981-11-09 1983-05-19 Fujitsu Ltd Magnetic bubble memory element
WO1985000244A1 (en) * 1983-06-29 1985-01-17 Burroughs Corporation Bubble memory which transfers bubbles in both right-to-left and left-to-right sps loops to provide a short access time
US4520459A (en) * 1983-06-29 1985-05-28 Burroughs Corporation Bubble memory which transfers bubbles in both right-to-left and left-to-right SPS loops to provide a short access time
JPS60501726A (en) * 1983-06-29 1985-10-11 バ−ロ−ス・コ−ポレ−ション Bubble memory that transfers bubbles within right-left and left-right SPS loops to provide short access times
EP0130791A3 (en) * 1983-06-29 1988-01-27 Unisys Corporation Bubble memory which transfers bubbles in both right-to-left and left-to-right sps loops to provide a short access time
US6973005B2 (en) * 2001-12-12 2005-12-06 Micron Technology, Inc. Flash array implementation with local and global bit lines
US6977853B2 (en) * 2001-12-12 2005-12-20 Micron Technology, Inc. Flash array implementation with local and global bit lines
US6977854B2 (en) * 2001-12-12 2005-12-20 Micron Technology, Inc. Flash array implementation with local and global bit lines
US7042778B2 (en) * 2001-12-12 2006-05-09 Micron Technology, Inc. Flash array implementation with local and global bit lines

Also Published As

Publication number Publication date
JPS6138549B2 (en) 1986-08-29

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