JPS5539607A - Reference voltage generation device - Google Patents

Reference voltage generation device

Info

Publication number
JPS5539607A
JPS5539607A JP11171978A JP11171978A JPS5539607A JP S5539607 A JPS5539607 A JP S5539607A JP 11171978 A JP11171978 A JP 11171978A JP 11171978 A JP11171978 A JP 11171978A JP S5539607 A JPS5539607 A JP S5539607A
Authority
JP
Japan
Prior art keywords
type
difference
threshold voltages
voltages
fermi levels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11171978A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Osamu Yamashiro
Kanji Yo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11171978A priority Critical patent/JPS5539607A/en
Priority to CH1621/79A priority patent/CH657712A5/en
Priority to FR7904226A priority patent/FR2447036B1/en
Priority to DE19792906527 priority patent/DE2906527A1/en
Priority to DE2954543A priority patent/DE2954543C2/de
Priority to IT20368/79A priority patent/IT1111987B/en
Priority to CA000321955A priority patent/CA1149081A/en
Priority to NL7901335A priority patent/NL7901335A/en
Priority to GB8119559A priority patent/GB2081014B/en
Priority to GB7907817A priority patent/GB2016801B/en
Priority to GB8119561A priority patent/GB2100540B/en
Priority to GB8119560A priority patent/GB2081015B/en
Priority to GB8119562A priority patent/GB2081458B/en
Publication of JPS5539607A publication Critical patent/JPS5539607A/en
Priority to CA000395812A priority patent/CA1146223A/en
Priority to CA000395810A priority patent/CA1154880A/en
Priority to CA000395811A priority patent/CA1145063A/en
Priority to CA000395813A priority patent/CA1143010A/en
Priority to US06/484,351 priority patent/US4559694A/en
Priority to HK80/84A priority patent/HK8084A/en
Priority to SG41684A priority patent/SG41684G/en
Priority to SG41584A priority patent/SG41584G/en
Priority to SG417/84A priority patent/SG41784G/en
Priority to MY1984375A priority patent/MY8400375A/en
Priority to CH1928/85A priority patent/CH672391B5/en
Priority to HK363/85A priority patent/HK36385A/en
Priority to HK364/85A priority patent/HK36485A/en
Priority to HK351/85A priority patent/HK35185A/en
Priority to MY658/85A priority patent/MY8500658A/en
Priority to MY671/85A priority patent/MY8500671A/en
Priority to MY672/85A priority patent/MY8500672A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain reference voltage with few variations and no need of adjustment after manufacturing by detecting the energy gap between Si semiconductors or the voltage smaller than this gap. CONSTITUTION:P layers 5 are formed on an N-type Si substrate 1 and N layers 6 are formed in a P-island 2. P-type and N-type polycrystal Si 7, 8 and intrinsic polycrystal Si 9 are selectively formed on each gate oxdation film. Then, with an insulation coating electrodes are provided to form P-channel FETA, B, C and N-channel FETD, E, F. Differences in Fermi levels between electrodes 7, 8 and 9 are taken out as reference voltages. Since the Fermi levels are little dependent on temperature, the differences in threshold voltages are also little dependent on temperature. When counecting drains and gates of FETT1, T2 in common and then operating thus obtained device at constant current I0, the difference in threshold voltages can be taken out from the difference in drain voltages because FETT1, T2 are different in their threshold voltages and equal in mutual conductances. Difference in Fermi levels between N-type and P-type semiconductors are obtained with use of N<+> and P<+> gate MOS.
JP11171978A 1978-03-08 1978-09-13 Reference voltage generation device Pending JPS5539607A (en)

Priority Applications (30)

Application Number Priority Date Filing Date Title
JP11171978A JPS5539607A (en) 1978-09-13 1978-09-13 Reference voltage generation device
CH1621/79A CH657712A5 (en) 1978-03-08 1979-02-19 REFERENCE VOLTAGE GENERATOR.
FR7904226A FR2447036B1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
DE19792906527 DE2906527A1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
DE2954543A DE2954543C2 (en) 1978-03-08 1979-02-20
IT20368/79A IT1111987B (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR DEVICE
CA000321955A CA1149081A (en) 1978-03-08 1979-02-20 Reference voltage generator device
NL7901335A NL7901335A (en) 1978-03-08 1979-02-20 GENERATOR FOR A REFERENCE VOLTAGE.
GB8119559A GB2081014B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB7907817A GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device
GB8119561A GB2100540B (en) 1978-03-08 1979-03-06 Reference voltage generators
GB8119560A GB2081015B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB8119562A GB2081458B (en) 1978-03-08 1979-03-06 Voltage comparitors
CA000395810A CA1154880A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395813A CA1143010A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395812A CA1146223A (en) 1978-03-08 1982-02-08 Battery checker
CA000395811A CA1145063A (en) 1978-03-08 1982-02-08 Reference voltage generator device
US06/484,351 US4559694A (en) 1978-09-13 1983-04-12 Method of manufacturing a reference voltage generator device
HK80/84A HK8084A (en) 1978-03-08 1984-01-24 A battery checker
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG417/84A SG41784G (en) 1978-03-08 1984-06-04 Reference voltage generating device
MY1984375A MY8400375A (en) 1978-03-08 1984-12-31 A battery checker
CH1928/85A CH672391B5 (en) 1978-03-08 1985-02-19 REFERENCE VOLTAGE GENERATOR.
HK351/85A HK35185A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK363/85A HK36385A (en) 1978-03-08 1985-05-09 Improvements in the manufacture of a semiconductor device
HK364/85A HK36485A (en) 1978-03-08 1985-05-09 Reference voltage generating device
MY658/85A MY8500658A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY671/85A MY8500671A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY672/85A MY8500672A (en) 1978-03-08 1985-12-30 Reference voltage generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11171978A JPS5539607A (en) 1978-09-13 1978-09-13 Reference voltage generation device

Publications (1)

Publication Number Publication Date
JPS5539607A true JPS5539607A (en) 1980-03-19

Family

ID=14568422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171978A Pending JPS5539607A (en) 1978-03-08 1978-09-13 Reference voltage generation device

Country Status (1)

Country Link
JP (1) JPS5539607A (en)

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