JPS5541731A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5541731A
JPS5541731A JP11444178A JP11444178A JPS5541731A JP S5541731 A JPS5541731 A JP S5541731A JP 11444178 A JP11444178 A JP 11444178A JP 11444178 A JP11444178 A JP 11444178A JP S5541731 A JPS5541731 A JP S5541731A
Authority
JP
Japan
Prior art keywords
layer
barrier metal
metallic
semiconductor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11444178A
Other languages
Japanese (ja)
Other versions
JPS59131B2 (en
Inventor
Kazuhiko Yamamoto
Yoshiaki Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP53114441A priority Critical patent/JPS59131B2/en
Publication of JPS5541731A publication Critical patent/JPS5541731A/en
Publication of JPS59131B2 publication Critical patent/JPS59131B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To provide a semiconductor device which is made to have excellent electrical properties and stability by providing a barrier metal layer having an oxidized surface between a semiconductor substrate and a metallic wiring layer or between the metallic wiring layer and an externally leading electrode protrusion.
CONSTITUTION: An electrode contacting hole is provided in an insulation film 2 formed on the surface of a silicon substrate 1. A barrier metal 3 prepared of a metal of high melting point, such as chrome, in the form of powder so as to have a much greater surface area with an oxidized film due to previous exposure to air is evaporated onto an electrode portion in the substrate 1 by the E-gun techniques to form a first metallic layer. A second metallic layer 4 which is used for wiring and composed of aluminum or the like is evaporation-formed over an area covering the barrier metal portion 3 and part of the insulation film 2 as far as the electrode portion, followed by heat treatment, to finally obtain a semiconductor device having a high efficiency and excellent stability.
COPYRIGHT: (C)1980,JPO&Japio
JP53114441A 1978-09-18 1978-09-18 semiconductor equipment Expired JPS59131B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53114441A JPS59131B2 (en) 1978-09-18 1978-09-18 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53114441A JPS59131B2 (en) 1978-09-18 1978-09-18 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5541731A true JPS5541731A (en) 1980-03-24
JPS59131B2 JPS59131B2 (en) 1984-01-05

Family

ID=14637804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53114441A Expired JPS59131B2 (en) 1978-09-18 1978-09-18 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS59131B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948754A (en) * 1987-09-02 1990-08-14 Nippondenso Co., Ltd. Method for making a semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482547A (en) * 1987-09-24 1989-03-28 Tadahiro Omi Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948754A (en) * 1987-09-02 1990-08-14 Nippondenso Co., Ltd. Method for making a semiconductor device

Also Published As

Publication number Publication date
JPS59131B2 (en) 1984-01-05

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